This paper by F. N. Hooge, published in *IEEE Transactions on Electron Devices* in 1994, focuses on 1/f noise in homogeneous semiconductor samples, distinguishing between mobility noise and number noise. The author emphasizes that mobility noise always exists with an α value of about \(10^{-4}\), and crystal damage significantly increases this noise. The paper discusses various theoretical models but concludes that none can fully explain experimental results. It provides empirical values for α in several semiconductors and highlights the importance of distinguishing between mobility and number noise in device models. The conclusion reiterates the presence of mobility 1/f noise, the influence of crystal damage, and the need for empirical data to validate theoretical models.This paper by F. N. Hooge, published in *IEEE Transactions on Electron Devices* in 1994, focuses on 1/f noise in homogeneous semiconductor samples, distinguishing between mobility noise and number noise. The author emphasizes that mobility noise always exists with an α value of about \(10^{-4}\), and crystal damage significantly increases this noise. The paper discusses various theoretical models but concludes that none can fully explain experimental results. It provides empirical values for α in several semiconductors and highlights the importance of distinguishing between mobility and number noise in device models. The conclusion reiterates the presence of mobility 1/f noise, the influence of crystal damage, and the need for empirical data to validate theoretical models.