Graphene field-effect transistors (FETs) with a cutoff frequency of 100 GHz have been fabricated on epitaxial graphene grown on a two-inch SiC wafer. These transistors, with a gate length of 240 nm, demonstrate the highest speed for any graphene device to date and outperform silicon MOSFETs at the same gate length. This achievement marks a significant milestone for carbon electronics, showing the potential of graphene for advanced electronic applications. Graphene, a single-atom-thick material with high carrier mobility, offers great potential for creating the smallest and fastest transistors. Previous demonstrations of graphene-based electronics include DC operation of FETs using graphene flakes, films from SiC substrates, or chemical vapor deposition. However, the critical challenge remains in demonstrating high-frequency graphene transistors compatible with wafer-scale fabrication. This study presents high-performance RF FETs fabricated on a two-inch graphene wafer, achieving a cutoff frequency of 100 GHz. The graphene was epitaxially grown on a SiC wafer at 1450°C, resulting in a 1-2 layer film. The resulting graphene film has a high electron carrier density and mobility, with an interfacial polymer layer used to preserve intrinsic mobility. The study fabricated arrays of top-gated FETs with gate lengths as short as 240 nm. The graphene FETs exhibit output characteristics different from conventional Si-MOSFETs due to the absence of a bandgap. The measured current gain shows a 1/f frequency dependence, with a cutoff frequency (fT) of 100 GHz for the 240 nm gate length, the highest speed achieved for any graphene device. The graphene FETs also show power gain up to 14 GHz and 10 GHz for 550 nm and 240 nm gate lengths, respectively. The high-performance graphene RF transistors demonstrate the high potential of graphene for advanced electronics applications.Graphene field-effect transistors (FETs) with a cutoff frequency of 100 GHz have been fabricated on epitaxial graphene grown on a two-inch SiC wafer. These transistors, with a gate length of 240 nm, demonstrate the highest speed for any graphene device to date and outperform silicon MOSFETs at the same gate length. This achievement marks a significant milestone for carbon electronics, showing the potential of graphene for advanced electronic applications. Graphene, a single-atom-thick material with high carrier mobility, offers great potential for creating the smallest and fastest transistors. Previous demonstrations of graphene-based electronics include DC operation of FETs using graphene flakes, films from SiC substrates, or chemical vapor deposition. However, the critical challenge remains in demonstrating high-frequency graphene transistors compatible with wafer-scale fabrication. This study presents high-performance RF FETs fabricated on a two-inch graphene wafer, achieving a cutoff frequency of 100 GHz. The graphene was epitaxially grown on a SiC wafer at 1450°C, resulting in a 1-2 layer film. The resulting graphene film has a high electron carrier density and mobility, with an interfacial polymer layer used to preserve intrinsic mobility. The study fabricated arrays of top-gated FETs with gate lengths as short as 240 nm. The graphene FETs exhibit output characteristics different from conventional Si-MOSFETs due to the absence of a bandgap. The measured current gain shows a 1/f frequency dependence, with a cutoff frequency (fT) of 100 GHz for the 240 nm gate length, the highest speed achieved for any graphene device. The graphene FETs also show power gain up to 14 GHz and 10 GHz for 550 nm and 240 nm gate lengths, respectively. The high-performance graphene RF transistors demonstrate the high potential of graphene for advanced electronics applications.