This paper reports the fabrication of high-performance graphene field-effect transistors (FETs) on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The transistors, grown epitaxially on the Si face of a high-purity semi-insulating SiC wafer, exhibit superior high-frequency performance compared to both exfoliated and CVD-grown graphene devices. The devices demonstrate the highest speed for any graphene FET to date and surpass the performance of state-of-the-art Si MOSFETs at the same gate length. The study confirms the high potential of graphene for advanced electronics applications, marking a significant milestone in carbon electronics. The high carrier mobility and low series resistance of the graphene FETs, along with their excellent output characteristics, make them promising candidates for terahertz integrated circuits.This paper reports the fabrication of high-performance graphene field-effect transistors (FETs) on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The transistors, grown epitaxially on the Si face of a high-purity semi-insulating SiC wafer, exhibit superior high-frequency performance compared to both exfoliated and CVD-grown graphene devices. The devices demonstrate the highest speed for any graphene FET to date and surpass the performance of state-of-the-art Si MOSFETs at the same gate length. The study confirms the high potential of graphene for advanced electronics applications, marking a significant milestone in carbon electronics. The high carrier mobility and low series resistance of the graphene FETs, along with their excellent output characteristics, make them promising candidates for terahertz integrated circuits.