The integration of two-dimensional (2D) electronics into three-dimensional (3D) systems has the potential to revolutionize logic circuits, similar to how 3D integration has transformed NAND flash memory. This review explores the progress, challenges, and future opportunities for 3D integration of 2D electronics. The adoption of 3D integration in logic circuits is driven by advancements in silicon device structures and their scaling. However, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. 2D materials, such as transition-metal dichalcogenides (TMDs), offer promising alternatives due to their atomically thin nature and high performance. These materials can enable multifunctional chips by combining logic with memory and sensing in a 3D-integrated chip, facilitating the development of 'more than Moore' technologies. The review discusses the progress in 2D electronics towards very-large-scale integration (VLSI), including advancements in material synthesis, transfer processes, and threshold voltage engineering. Key challenges include achieving high device yield, minimizing device-to-device variability, and optimizing the integration of 2D materials with silicon-based technologies. Techniques such as substitutional doping, surface charge-transfer doping (SCTD), and the use of high-κ dielectrics are explored for threshold voltage control. Additionally, the integration of 2D materials with silicon-based logic or memory devices is discussed, highlighting applications in optoelectronics, sensing, and memory. Recent advancements include the demonstration of 3D integrated circuits using stacked 2D materials, such as MoS₂ and WSe₂, with applications in inverters, NAND, and NOR circuits. The development of monolithic 3D integration using 2D materials has shown promising results, with devices achieving high performance and low power consumption. Challenges remain in scaling these technologies, including the need for high-quality growth of 2D materials at BEOL-compatible temperatures and the optimization of transfer processes to ensure uniformity and minimal defects. Despite these challenges, the integration of 2D materials into 3D systems holds great potential for enabling sustainable and energy-efficient computing systems.The integration of two-dimensional (2D) electronics into three-dimensional (3D) systems has the potential to revolutionize logic circuits, similar to how 3D integration has transformed NAND flash memory. This review explores the progress, challenges, and future opportunities for 3D integration of 2D electronics. The adoption of 3D integration in logic circuits is driven by advancements in silicon device structures and their scaling. However, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. 2D materials, such as transition-metal dichalcogenides (TMDs), offer promising alternatives due to their atomically thin nature and high performance. These materials can enable multifunctional chips by combining logic with memory and sensing in a 3D-integrated chip, facilitating the development of 'more than Moore' technologies. The review discusses the progress in 2D electronics towards very-large-scale integration (VLSI), including advancements in material synthesis, transfer processes, and threshold voltage engineering. Key challenges include achieving high device yield, minimizing device-to-device variability, and optimizing the integration of 2D materials with silicon-based technologies. Techniques such as substitutional doping, surface charge-transfer doping (SCTD), and the use of high-κ dielectrics are explored for threshold voltage control. Additionally, the integration of 2D materials with silicon-based logic or memory devices is discussed, highlighting applications in optoelectronics, sensing, and memory. Recent advancements include the demonstration of 3D integrated circuits using stacked 2D materials, such as MoS₂ and WSe₂, with applications in inverters, NAND, and NOR circuits. The development of monolithic 3D integration using 2D materials has shown promising results, with devices achieving high performance and low power consumption. Challenges remain in scaling these technologies, including the need for high-quality growth of 2D materials at BEOL-compatible temperatures and the optimization of transfer processes to ensure uniformity and minimal defects. Despite these challenges, the integration of 2D materials into 3D systems holds great potential for enabling sustainable and energy-efficient computing systems.