This paper presents a 1.5 GHz low noise amplifier (LNA) designed for Global Positioning System (GPS) receivers using a 0.6 μm CMOS process. The LNA achieves a forward gain of 22 dB and a noise figure of 3.5 dB while drawing 30 mW from a 1.5V supply. This represents the lowest noise figure reported for a CMOS amplifier operating above 1 GHz. The design employs inductive source degeneration and input tuning to achieve a real 50Ω impedance at the input. The noise figure is optimized by minimizing the size of the input device, which also improves linearity. Experimental results show a measured gain of 22 dB and a noise figure of 3.5 dB, with a minimum noise figure of 3.3 dB at various supply voltages. The study demonstrates that modern CMOS processes are suitable for low-noise applications above 1 GHz, despite the presence of excess channel noise.This paper presents a 1.5 GHz low noise amplifier (LNA) designed for Global Positioning System (GPS) receivers using a 0.6 μm CMOS process. The LNA achieves a forward gain of 22 dB and a noise figure of 3.5 dB while drawing 30 mW from a 1.5V supply. This represents the lowest noise figure reported for a CMOS amplifier operating above 1 GHz. The design employs inductive source degeneration and input tuning to achieve a real 50Ω impedance at the input. The noise figure is optimized by minimizing the size of the input device, which also improves linearity. Experimental results show a measured gain of 22 dB and a noise figure of 3.5 dB, with a minimum noise figure of 3.3 dB at various supply voltages. The study demonstrates that modern CMOS processes are suitable for low-noise applications above 1 GHz, despite the presence of excess channel noise.