This letter investigates a top-gated field effect device (FED) made from monolayer graphene, using a conventional top-down CMOS-compatible process flow. The study compares carrier mobilities in graphene pseudo-MOS structures with those in top-gated Graphene-FEDs, finding that the extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs. The research highlights the potential of graphene for future electronic devices, despite the limitations imposed by the top-gate electrode. The top-gate effectively modulates the drain current, confirming the feasibility of a combined field effect from both top and back gates. The results suggest that band gap tuning will be crucial for further improving device characteristics.This letter investigates a top-gated field effect device (FED) made from monolayer graphene, using a conventional top-down CMOS-compatible process flow. The study compares carrier mobilities in graphene pseudo-MOS structures with those in top-gated Graphene-FEDs, finding that the extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs. The research highlights the potential of graphene for future electronic devices, despite the limitations imposed by the top-gate electrode. The top-gate effectively modulates the drain current, confirming the feasibility of a combined field effect from both top and back gates. The results suggest that band gap tuning will be crucial for further improving device characteristics.