This letter presents a study of a top-gated field effect device (FED) made from monolayer graphene. The device was fabricated using a conventional top-down CMOS-compatible process. Carrier mobilities in graphene pseudo-MOS structures were compared to those in top-gated Graphene-FEDs. The extracted values exceeded the universal mobility of silicon and silicon-on-insulator MOSFETs. Graphene, a two-dimensional carbon sheet, has excellent electronic properties with reported carrier mobilities between 3000 and 27000 cm²/Vs, making it a promising material for future nanoelectronic devices. The carrier transport in graphene occurs in the π-orbitals perpendicular to the surface, and its extraordinary transport properties are attributed to a single spatially quantized subband populated by electrons or light and heavy holes. The study shows that the top-gated graphene FED has a higher carrier mobility than silicon transistors. The mobility values for holes and electrons in the graphene FED were found to be 4790 cm²/Vs and 4780 cm²/Vs, respectively, which are significantly higher than those of silicon. The top-gate was used to modulate the drain current, confirming that the field effect from a combined action of top- and back-gate can be applied to graphene devices. The results indicate that graphene has the potential to be a promising material for future electronic devices. The study also highlights the importance of further research to improve device characteristics, such as band gap tuning. The research was supported by various institutions and individuals, and the study was published in the IEEE Electron Device Letters.This letter presents a study of a top-gated field effect device (FED) made from monolayer graphene. The device was fabricated using a conventional top-down CMOS-compatible process. Carrier mobilities in graphene pseudo-MOS structures were compared to those in top-gated Graphene-FEDs. The extracted values exceeded the universal mobility of silicon and silicon-on-insulator MOSFETs. Graphene, a two-dimensional carbon sheet, has excellent electronic properties with reported carrier mobilities between 3000 and 27000 cm²/Vs, making it a promising material for future nanoelectronic devices. The carrier transport in graphene occurs in the π-orbitals perpendicular to the surface, and its extraordinary transport properties are attributed to a single spatially quantized subband populated by electrons or light and heavy holes. The study shows that the top-gated graphene FED has a higher carrier mobility than silicon transistors. The mobility values for holes and electrons in the graphene FED were found to be 4790 cm²/Vs and 4780 cm²/Vs, respectively, which are significantly higher than those of silicon. The top-gate was used to modulate the drain current, confirming that the field effect from a combined action of top- and back-gate can be applied to graphene devices. The results indicate that graphene has the potential to be a promising material for future electronic devices. The study also highlights the importance of further research to improve device characteristics, such as band gap tuning. The research was supported by various institutions and individuals, and the study was published in the IEEE Electron Device Letters.