A review of β-Ga₂O₃ power diodes discusses the potential of β-Ga₂O₃ as a wide-bandgap semiconductor material for high-performance power devices. β-Ga₂O₃ has a bandgap of 4.7–4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is significantly higher than that of SiC and GaN. These properties make β-Ga₂O₃ suitable for high-voltage, high-power applications. However, the lack of effective p-type doping limits the development of bipolar devices, and most research has focused on unipolar devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs). The review summarizes the research progress on different structures of β-Ga₂O₃ power diodes, including vertical-structure SBDs, vertical heterojunction-structure diodes, and lateral-structure diodes. It also discusses thermal management and circuit applications of these devices. The review highlights the development of various structures to enhance device performance, such as field plate structures, edge termination structures, and trench structures. These structures help alleviate electric field concentration at the electrode edges, thereby increasing the breakdown voltage (BV) and improving device performance. The review also discusses the challenges associated with β-Ga₂O₃, including the difficulty in achieving p-type doping and the relatively low electron mobility and thermal conductivity compared to other wide-bandgap materials. Despite these challenges, β-Ga₂O₃ shows great potential for power device applications due to its superior electrical properties. The review concludes that β-Ga₂O₃ power diodes have significant potential for future high-power and high-voltage electronic applications.A review of β-Ga₂O₃ power diodes discusses the potential of β-Ga₂O₃ as a wide-bandgap semiconductor material for high-performance power devices. β-Ga₂O₃ has a bandgap of 4.7–4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is significantly higher than that of SiC and GaN. These properties make β-Ga₂O₃ suitable for high-voltage, high-power applications. However, the lack of effective p-type doping limits the development of bipolar devices, and most research has focused on unipolar devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs). The review summarizes the research progress on different structures of β-Ga₂O₃ power diodes, including vertical-structure SBDs, vertical heterojunction-structure diodes, and lateral-structure diodes. It also discusses thermal management and circuit applications of these devices. The review highlights the development of various structures to enhance device performance, such as field plate structures, edge termination structures, and trench structures. These structures help alleviate electric field concentration at the electrode edges, thereby increasing the breakdown voltage (BV) and improving device performance. The review also discusses the challenges associated with β-Ga₂O₃, including the difficulty in achieving p-type doping and the relatively low electron mobility and thermal conductivity compared to other wide-bandgap materials. Despite these challenges, β-Ga₂O₃ shows great potential for power device applications due to its superior electrical properties. The review concludes that β-Ga₂O₃ power diodes have significant potential for future high-power and high-voltage electronic applications.