This review article provides an in-depth analysis of β-Ga₂O₃ power diodes, focusing on their material properties, device structures, and performance enhancements. β-Ga₂O₃, a wide-bandgap semiconductor, offers superior electrical properties compared to SiC and GaN, including a wider bandgap (4.7–4.9 eV), a critical electric field strength of 8 MV/cm, and a Baliga’s figure of merit (BFOM) of 3444. However, the lack of effective p-type doping limits the development of bipolar devices, leading researchers to focus on unipolar devices such as Schottky barrier diodes (SBDs) and heterojunction diodes. The article highlights the advancements in β-Ga₂O₃ SBDs, including the introduction of field plates, edge termination, trench structures, and mesa termination to enhance breakdown voltage (BV) and on-resistance (Ron). Notable improvements include devices with BV exceeding 10 kV and PFOM values of 13.2 GW/cm². The use of metal oxides as Schottky contacts has also shown promising results in high-temperature performance. For heterojunction diodes, the article discusses the challenges and potential solutions, such as the use of p-type NiO to form p-n heterojunctions. The review concludes by summarizing the current state of β-Ga₂O₃ power diodes and their potential applications in high-power electronics, emphasizing the need for further research to overcome remaining challenges.This review article provides an in-depth analysis of β-Ga₂O₃ power diodes, focusing on their material properties, device structures, and performance enhancements. β-Ga₂O₃, a wide-bandgap semiconductor, offers superior electrical properties compared to SiC and GaN, including a wider bandgap (4.7–4.9 eV), a critical electric field strength of 8 MV/cm, and a Baliga’s figure of merit (BFOM) of 3444. However, the lack of effective p-type doping limits the development of bipolar devices, leading researchers to focus on unipolar devices such as Schottky barrier diodes (SBDs) and heterojunction diodes. The article highlights the advancements in β-Ga₂O₃ SBDs, including the introduction of field plates, edge termination, trench structures, and mesa termination to enhance breakdown voltage (BV) and on-resistance (Ron). Notable improvements include devices with BV exceeding 10 kV and PFOM values of 13.2 GW/cm². The use of metal oxides as Schottky contacts has also shown promising results in high-temperature performance. For heterojunction diodes, the article discusses the challenges and potential solutions, such as the use of p-type NiO to form p-n heterojunctions. The review concludes by summarizing the current state of β-Ga₂O₃ power diodes and their potential applications in high-power electronics, emphasizing the need for further research to overcome remaining challenges.