This review by Fu-Chien Chiu discusses the conduction mechanisms in dielectric films, which are crucial for the successful application of dielectric materials in semiconductor devices. The conduction mechanisms are categorized into two types: electrode-limited and bulk-limited. Electrode-limited conduction mechanisms depend on the electrical properties at the electrode-dielectric interface, such as the barrier height and effective mass of conduction carriers. Bulk-limited conduction mechanisms, on the other hand, depend on the properties of the dielectric itself, including trap levels, trap spacing, trap density, carrier drift mobility, dielectric relaxation time, and density of states in the conduction band. The review covers various conduction mechanisms in detail, including Schottky or thermionic emission, Fowler-Nordheim tunneling, direct tunneling, thermionic-field emission, Poole-Frenkel emission, hopping conduction, ohmic conduction, space-charge-limited conduction, ionic conduction, and grain-boundary-limited conduction. Each mechanism is explained with its governing equations, experimental data, and simulation results. The analysis of these mechanisms provides valuable insights into the electrical properties of dielectric films, which are essential for the design and optimization of integrated circuits and other semiconductor devices. The review also highlights the importance of understanding these conduction mechanisms for the development of reliable and efficient dielectric materials. By studying the temperature dependence and other factors affecting these mechanisms, researchers can better predict and control the electrical behavior of dielectric films, leading to improved performance in various applications.This review by Fu-Chien Chiu discusses the conduction mechanisms in dielectric films, which are crucial for the successful application of dielectric materials in semiconductor devices. The conduction mechanisms are categorized into two types: electrode-limited and bulk-limited. Electrode-limited conduction mechanisms depend on the electrical properties at the electrode-dielectric interface, such as the barrier height and effective mass of conduction carriers. Bulk-limited conduction mechanisms, on the other hand, depend on the properties of the dielectric itself, including trap levels, trap spacing, trap density, carrier drift mobility, dielectric relaxation time, and density of states in the conduction band. The review covers various conduction mechanisms in detail, including Schottky or thermionic emission, Fowler-Nordheim tunneling, direct tunneling, thermionic-field emission, Poole-Frenkel emission, hopping conduction, ohmic conduction, space-charge-limited conduction, ionic conduction, and grain-boundary-limited conduction. Each mechanism is explained with its governing equations, experimental data, and simulation results. The analysis of these mechanisms provides valuable insights into the electrical properties of dielectric films, which are essential for the design and optimization of integrated circuits and other semiconductor devices. The review also highlights the importance of understanding these conduction mechanisms for the development of reliable and efficient dielectric materials. By studying the temperature dependence and other factors affecting these mechanisms, researchers can better predict and control the electrical behavior of dielectric films, leading to improved performance in various applications.