This review article discusses the conduction mechanisms in dielectric films, which are crucial for the successful applications of dielectric materials. Two main types of conduction mechanisms are identified: electrode-limited and bulk-limited. Electrode-limited conduction depends on the electrical properties at the electrode-dielectric interface, while bulk-limited conduction depends on the properties of the dielectric itself. The article provides an in-depth analysis of these mechanisms, including their physical parameters and the methods used to extract them. Electrode-limited conduction mechanisms include Schottky or thermionic emission, Fowler-Nordheim tunneling, direct tunneling, and thermionic-field emission. These mechanisms are influenced by the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers. Bulk-limited conduction mechanisms include Poole-Frenkel emission, hopping conduction, ohmic conduction, space-charge-limited conduction, ionic conduction, and grain-boundary-limited conduction. These mechanisms are influenced by parameters such as trap energy levels, trap spacing, trap density, and dielectric relaxation time. The article also discusses the experimental methods used to measure conduction currents through dielectric films, including the use of MIM and MIS capacitors. It provides detailed analysis of various conduction mechanisms, including their theoretical expressions and experimental validation. The study highlights the importance of understanding these conduction mechanisms for the development of reliable and efficient dielectric materials in semiconductor applications. The review concludes with the significance of these mechanisms in determining the performance and reliability of dielectric films in integrated circuits.This review article discusses the conduction mechanisms in dielectric films, which are crucial for the successful applications of dielectric materials. Two main types of conduction mechanisms are identified: electrode-limited and bulk-limited. Electrode-limited conduction depends on the electrical properties at the electrode-dielectric interface, while bulk-limited conduction depends on the properties of the dielectric itself. The article provides an in-depth analysis of these mechanisms, including their physical parameters and the methods used to extract them. Electrode-limited conduction mechanisms include Schottky or thermionic emission, Fowler-Nordheim tunneling, direct tunneling, and thermionic-field emission. These mechanisms are influenced by the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers. Bulk-limited conduction mechanisms include Poole-Frenkel emission, hopping conduction, ohmic conduction, space-charge-limited conduction, ionic conduction, and grain-boundary-limited conduction. These mechanisms are influenced by parameters such as trap energy levels, trap spacing, trap density, and dielectric relaxation time. The article also discusses the experimental methods used to measure conduction currents through dielectric films, including the use of MIM and MIS capacitors. It provides detailed analysis of various conduction mechanisms, including their theoretical expressions and experimental validation. The study highlights the importance of understanding these conduction mechanisms for the development of reliable and efficient dielectric materials in semiconductor applications. The review concludes with the significance of these mechanisms in determining the performance and reliability of dielectric films in integrated circuits.