The article discusses the development of a continuous-wave (CW) Raman silicon laser, a significant milestone in silicon-based optoelectronics. The laser is constructed using a low-loss silicon-on-insulator (SOI) rib waveguide with multilayer dielectric coatings on its facets. A reverse-biased p-i-n diode is embedded in the waveguide to reduce two-photon absorption (TPA)-induced free carrier absorption (FCA), which has been a major barrier to CW lasing in silicon. The laser cavity is formed by coating the waveguide facets with multilayer dielectric films, achieving stable single-mode output with a side-mode suppression of over 55 dB and a linewidth of less than 80 MHz. The lasing threshold depends on the reverse-biased voltage, and the laser wavelength can be tuned by adjusting the pump laser wavelength. The demonstration of a CW silicon laser opens up possibilities for fully integrated monolithic photonic chips and further optimization of the laser performance.The article discusses the development of a continuous-wave (CW) Raman silicon laser, a significant milestone in silicon-based optoelectronics. The laser is constructed using a low-loss silicon-on-insulator (SOI) rib waveguide with multilayer dielectric coatings on its facets. A reverse-biased p-i-n diode is embedded in the waveguide to reduce two-photon absorption (TPA)-induced free carrier absorption (FCA), which has been a major barrier to CW lasing in silicon. The laser cavity is formed by coating the waveguide facets with multilayer dielectric films, achieving stable single-mode output with a side-mode suppression of over 55 dB and a linewidth of less than 80 MHz. The lasing threshold depends on the reverse-biased voltage, and the laser wavelength can be tuned by adjusting the pump laser wavelength. The demonstration of a CW silicon laser opens up possibilities for fully integrated monolithic photonic chips and further optimization of the laser performance.