A two-terminal ferroelectric fin diode (FFD) is proposed as a novel non-volatile memory device that combines a ferroelectric capacitor and a fin-like semiconductor channel, sharing both top and bottom electrodes. This device exhibits both digital and analog memory functionalities, with robust performance, including an endurance of up to $10^{10}$ cycles, an ON/OFF ratio of $-10^2$, a feature size of 30 nm, an operating energy of ~20 fJ, and an operation speed of 100 ns. The FFD's simple two-terminal structure and self-rectifying ratio of ~$10^4$ make it suitable for passive crossbar arrays, essential for in-memory computing. The device uses different ferroelectric materials, emphasizing its universality. The FFD demonstrates high device-to-device uniformity, with a small $\sigma/\mu$ value of -0.023 for positive coercive voltage and -0.019 for negative coercive voltage. It is also suitable for in-memory computing, as demonstrated by a simple pattern classification task. The FFD's performance surpasses current non-volatile memories, with a high self-rectification ratio and low energy consumption. The device's structure allows for efficient design of passive crossbar arrays for high-density memories and emerging computing applications. The FFD's robustness and universality make it a promising candidate for future electronic circuit architectures.A two-terminal ferroelectric fin diode (FFD) is proposed as a novel non-volatile memory device that combines a ferroelectric capacitor and a fin-like semiconductor channel, sharing both top and bottom electrodes. This device exhibits both digital and analog memory functionalities, with robust performance, including an endurance of up to $10^{10}$ cycles, an ON/OFF ratio of $-10^2$, a feature size of 30 nm, an operating energy of ~20 fJ, and an operation speed of 100 ns. The FFD's simple two-terminal structure and self-rectifying ratio of ~$10^4$ make it suitable for passive crossbar arrays, essential for in-memory computing. The device uses different ferroelectric materials, emphasizing its universality. The FFD demonstrates high device-to-device uniformity, with a small $\sigma/\mu$ value of -0.023 for positive coercive voltage and -0.019 for negative coercive voltage. It is also suitable for in-memory computing, as demonstrated by a simple pattern classification task. The FFD's performance surpasses current non-volatile memories, with a high self-rectification ratio and low energy consumption. The device's structure allows for efficient design of passive crossbar arrays for high-density memories and emerging computing applications. The FFD's robustness and universality make it a promising candidate for future electronic circuit architectures.