This article presents an all-dielectric metasurface analogue of electromagnetically induced transparency (EIT), demonstrating a high-quality factor (Q-factor) resonance with a Q-factor of 483 in the near-infrared regime. The metasurface is composed of silicon-based structures, which exhibit extremely low absorption loss and coherent interaction between neighboring meta-atoms. This results in a refractive index sensor with a figure-of-merit (FOM) of 103. The EIT-like resonance is achieved through a Fano-type interference between a broadband 'bright' mode resonator and a narrowband 'dark' mode resonator. The 'bright' mode resonator is accessible from free space, while the 'dark' mode resonator is less accessible. When these two resonances are brought into close proximity in both the spatial and frequency domains, they interfere to produce an extremely narrow reflection or transmission window. The low radiative loss of the dark mode allows for a sharp Fano resonance, resulting in complete transmission or reflection across a very narrow bandwidth. The metasurface is designed using a periodic lattice of rectangular bar resonators and ring resonators, both made of silicon. The bar resonators serve as electric dipole antennas, while the ring resonators support magnetic dipole modes. The collective oscillations of the bar resonators form the 'bright' mode resonance, while the ring resonators interact through near-field coupling to form the 'dark' mode resonance. The interference between the bright and dark modes forms a typical 3-level Fano-resonant system. The high-Q resonance is achieved by minimizing both radiative and non-radiative damping through coherent interaction among the resonators and reducing absorption loss. The metasurface is fabricated using electron-beam lithography and reactive-ion etching. The resulting structure is characterized using scanning electron microscopy and optical measurements. The metasurface is used to demonstrate an optical refractive index sensor with a high FOM of 103. The sensor is sensitive to changes in the refractive index of the surrounding medium, with a sensitivity of 289 nm RIU⁻¹. The metasurface also shows potential for applications such as bio/chemical sensing, enhancing emission rates, optical modulation, and low-loss slow-light devices. The results demonstrate that dielectric metasurfaces can significantly improve the performance of their plasmonic counterparts by reducing absorption loss, leading to sensing FOMs that far exceed those of previously demonstrated LSPR sensors.This article presents an all-dielectric metasurface analogue of electromagnetically induced transparency (EIT), demonstrating a high-quality factor (Q-factor) resonance with a Q-factor of 483 in the near-infrared regime. The metasurface is composed of silicon-based structures, which exhibit extremely low absorption loss and coherent interaction between neighboring meta-atoms. This results in a refractive index sensor with a figure-of-merit (FOM) of 103. The EIT-like resonance is achieved through a Fano-type interference between a broadband 'bright' mode resonator and a narrowband 'dark' mode resonator. The 'bright' mode resonator is accessible from free space, while the 'dark' mode resonator is less accessible. When these two resonances are brought into close proximity in both the spatial and frequency domains, they interfere to produce an extremely narrow reflection or transmission window. The low radiative loss of the dark mode allows for a sharp Fano resonance, resulting in complete transmission or reflection across a very narrow bandwidth. The metasurface is designed using a periodic lattice of rectangular bar resonators and ring resonators, both made of silicon. The bar resonators serve as electric dipole antennas, while the ring resonators support magnetic dipole modes. The collective oscillations of the bar resonators form the 'bright' mode resonance, while the ring resonators interact through near-field coupling to form the 'dark' mode resonance. The interference between the bright and dark modes forms a typical 3-level Fano-resonant system. The high-Q resonance is achieved by minimizing both radiative and non-radiative damping through coherent interaction among the resonators and reducing absorption loss. The metasurface is fabricated using electron-beam lithography and reactive-ion etching. The resulting structure is characterized using scanning electron microscopy and optical measurements. The metasurface is used to demonstrate an optical refractive index sensor with a high FOM of 103. The sensor is sensitive to changes in the refractive index of the surrounding medium, with a sensitivity of 289 nm RIU⁻¹. The metasurface also shows potential for applications such as bio/chemical sensing, enhancing emission rates, optical modulation, and low-loss slow-light devices. The results demonstrate that dielectric metasurfaces can significantly improve the performance of their plasmonic counterparts by reducing absorption loss, leading to sensing FOMs that far exceed those of previously demonstrated LSPR sensors.