Alternating-Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

Alternating-Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

August 19, 2024 | David P. Pappas, Mark Field, Cameron J. Kopas, Joel A. Howard, Xiqiao Wang, Ella Lachman, Jinsu Oh, Lin Zhou, Alysson Gold, Gregory M. Stiehl, Kameshwar Yadavalli, Eyob A. Sete, Andrew Bestwick, Matthew J. Kramer, and Josh Y. Mutus
This study presents a novel technique called Alternating-Bias Assisted Annealing (ABAA) for tuning the electrical properties of aluminum-oxide tunnel junctions. The method involves applying a low-voltage alternating-bias to the junctions, enabling resistance tuning of over 70%. The results show improved coherence and reduced two-level system defects. Transmission electron microscopy reveals that the treated junctions are predominantly amorphous with a more uniform distribution of alumina coordination. The technique is expected to be useful for other devices based on ionic amorphous materials. Superconducting quantum bits rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. The ABAA technique allows for controllable tuning of the junctions' electrical properties, which is crucial for the performance of superconducting qubits. The critical current of the barrier sets the Josephson energy of the device, which determines the parameters of the transmon qubit. The ABAA process was shown to significantly improve the junction resistance, reduce loss, and decrease defects, leading to better qubit coherence and stability. The ABAA technique was tested on various junctions, showing a high success rate and significant improvements in qubit performance. The results indicate that the ABAA process can be used to tune the resistance of the junctions, leading to better frequency tuning and coherence. The technique was also shown to reduce the presence of two-level systems, which can cause decoherence in qubits. The study also highlights the importance of junction uniformity and the role of atomic reordering in improving the performance of superconducting qubits. The ABAA process was found to be effective in improving the properties of the junctions, with a significant increase in resistance and a reduction in loss. The technique was applied to various junctions, showing a high success rate and significant improvements in qubit performance. The study also highlights the importance of junction uniformity and the role of atomic reordering in improving the performance of superconducting qubits. The results suggest that ABAA could be a valuable tool for improving the performance of superconducting quantum processors by enhancing qubit frequency targeting, coherence, and stability.This study presents a novel technique called Alternating-Bias Assisted Annealing (ABAA) for tuning the electrical properties of aluminum-oxide tunnel junctions. The method involves applying a low-voltage alternating-bias to the junctions, enabling resistance tuning of over 70%. The results show improved coherence and reduced two-level system defects. Transmission electron microscopy reveals that the treated junctions are predominantly amorphous with a more uniform distribution of alumina coordination. The technique is expected to be useful for other devices based on ionic amorphous materials. Superconducting quantum bits rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. The ABAA technique allows for controllable tuning of the junctions' electrical properties, which is crucial for the performance of superconducting qubits. The critical current of the barrier sets the Josephson energy of the device, which determines the parameters of the transmon qubit. The ABAA process was shown to significantly improve the junction resistance, reduce loss, and decrease defects, leading to better qubit coherence and stability. The ABAA technique was tested on various junctions, showing a high success rate and significant improvements in qubit performance. The results indicate that the ABAA process can be used to tune the resistance of the junctions, leading to better frequency tuning and coherence. The technique was also shown to reduce the presence of two-level systems, which can cause decoherence in qubits. The study also highlights the importance of junction uniformity and the role of atomic reordering in improving the performance of superconducting qubits. The ABAA process was found to be effective in improving the properties of the junctions, with a significant increase in resistance and a reduction in loss. The technique was applied to various junctions, showing a high success rate and significant improvements in qubit performance. The study also highlights the importance of junction uniformity and the role of atomic reordering in improving the performance of superconducting qubits. The results suggest that ABAA could be a valuable tool for improving the performance of superconducting quantum processors by enhancing qubit frequency targeting, coherence, and stability.
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