This study investigates the lattice vibrations of single and few-layer molybdenum disulfide (MoS₂) using Raman spectroscopy and atomic-force microscopy (AFM). The samples were exfoliated on a SiO₂/Si substrate, and their thickness was determined by AFM. Two Raman modes, E¹₂g and A₁g, exhibited thickness-dependent frequency shifts, with the former decreasing and the latter increasing with thickness. This behavior cannot be fully explained by van der Waals interlayer coupling alone, suggesting the influence of Coulombic interactions and stacking-induced changes in intralayer bonding. The study provides a reliable method for determining layer thickness and highlights the evolution of structural parameters in layered materials transitioning from three-dimensional to two-dimensional regimes. The findings have implications for understanding the electronic, optical, chemical, and mechanical properties of atomically thin MoS₂ films.This study investigates the lattice vibrations of single and few-layer molybdenum disulfide (MoS₂) using Raman spectroscopy and atomic-force microscopy (AFM). The samples were exfoliated on a SiO₂/Si substrate, and their thickness was determined by AFM. Two Raman modes, E¹₂g and A₁g, exhibited thickness-dependent frequency shifts, with the former decreasing and the latter increasing with thickness. This behavior cannot be fully explained by van der Waals interlayer coupling alone, suggesting the influence of Coulombic interactions and stacking-induced changes in intralayer bonding. The study provides a reliable method for determining layer thickness and highlights the evolution of structural parameters in layered materials transitioning from three-dimensional to two-dimensional regimes. The findings have implications for understanding the electronic, optical, chemical, and mechanical properties of atomically thin MoS₂ films.