This study investigates the transport properties of suspended graphene (SG) and compares them with those of non-suspended graphene (NSG). The research shows that suspended graphene samples exhibit significantly higher carrier mobility and lower temperature-dependent resistivity compared to non-suspended samples. The mobility in suspended graphene reaches up to 200,000 cm² V⁻¹ s⁻¹ at low carrier densities, which is much higher than in semiconductors or non-suspended graphene. The resistivity of suspended graphene is sharply peaked at the Dirac point and becomes narrower with decreasing temperature, indicating ballistic transport. In contrast, non-suspended graphene shows a broader resistivity peak and higher resistivity at higher temperatures due to substrate-induced potential fluctuations. The study also reveals that the mobility in suspended graphene decreases with increasing temperature, but remains high even at low temperatures. This suggests that suspended graphene is less affected by long-range scattering, which is a major source of scattering in non-suspended samples. The mean free path in suspended graphene is also significantly larger, indicating that the transport is closer to ballistic behavior. The results suggest that suspended graphene has intrinsic transport properties that are closer to those of ideal Dirac fermions, with minimal scattering effects. The research demonstrates that suspended graphene can achieve near-ballistic transport, which is crucial for the development of nanoscale electronic devices. The findings highlight the importance of minimizing environmental interactions in achieving high-quality graphene samples. The study provides strong evidence that suspended graphene can exhibit transport properties that are close to the theoretical predictions for ballistic transport, making it a promising material for future nanoelectronic applications.This study investigates the transport properties of suspended graphene (SG) and compares them with those of non-suspended graphene (NSG). The research shows that suspended graphene samples exhibit significantly higher carrier mobility and lower temperature-dependent resistivity compared to non-suspended samples. The mobility in suspended graphene reaches up to 200,000 cm² V⁻¹ s⁻¹ at low carrier densities, which is much higher than in semiconductors or non-suspended graphene. The resistivity of suspended graphene is sharply peaked at the Dirac point and becomes narrower with decreasing temperature, indicating ballistic transport. In contrast, non-suspended graphene shows a broader resistivity peak and higher resistivity at higher temperatures due to substrate-induced potential fluctuations. The study also reveals that the mobility in suspended graphene decreases with increasing temperature, but remains high even at low temperatures. This suggests that suspended graphene is less affected by long-range scattering, which is a major source of scattering in non-suspended samples. The mean free path in suspended graphene is also significantly larger, indicating that the transport is closer to ballistic behavior. The results suggest that suspended graphene has intrinsic transport properties that are closer to those of ideal Dirac fermions, with minimal scattering effects. The research demonstrates that suspended graphene can achieve near-ballistic transport, which is crucial for the development of nanoscale electronic devices. The findings highlight the importance of minimizing environmental interactions in achieving high-quality graphene samples. The study provides strong evidence that suspended graphene can exhibit transport properties that are close to the theoretical predictions for ballistic transport, making it a promising material for future nanoelectronic applications.