The paper discusses the transport properties of suspended graphene, which are significantly different from those of graphene supported on an insulating substrate. In suspended graphene, potential fluctuations are reduced, allowing for high carrier mobility even at low carrier densities. The authors report low-temperature mobilities approaching 200,000 cm² V⁻¹ e⁻¹ for carrier densities below 5 × 10¹⁰ cm⁻², which is not achievable in semiconductors or non-suspended graphene. The conductivity of suspended graphene at the Dirac point is strongly temperature-dependent and approaches ballistic values at liquid helium temperatures. At higher temperatures, thermally induced long-range scattering becomes significant. The study uses suspended graphene samples fabricated from conventional non-suspended graphene devices, incorporating multiple electrodes for four-lead transport measurements. The results show that the maximum resistivity in suspended graphene samples is significantly higher than in non-suspended samples, and the peak width of the resistivity curve is more than an order of magnitude narrower, indicating near-ballistic transport. These findings open the door to the realization of new nanodevices based on the unique transport properties of Dirac fermion physics in graphene.The paper discusses the transport properties of suspended graphene, which are significantly different from those of graphene supported on an insulating substrate. In suspended graphene, potential fluctuations are reduced, allowing for high carrier mobility even at low carrier densities. The authors report low-temperature mobilities approaching 200,000 cm² V⁻¹ e⁻¹ for carrier densities below 5 × 10¹⁰ cm⁻², which is not achievable in semiconductors or non-suspended graphene. The conductivity of suspended graphene at the Dirac point is strongly temperature-dependent and approaches ballistic values at liquid helium temperatures. At higher temperatures, thermally induced long-range scattering becomes significant. The study uses suspended graphene samples fabricated from conventional non-suspended graphene devices, incorporating multiple electrodes for four-lead transport measurements. The results show that the maximum resistivity in suspended graphene samples is significantly higher than in non-suspended samples, and the peak width of the resistivity curve is more than an order of magnitude narrower, indicating near-ballistic transport. These findings open the door to the realization of new nanodevices based on the unique transport properties of Dirac fermion physics in graphene.