This study presents autonomous self-healing supramolecular polymer transistors for skin electronics. The key innovation is the use of a single supramolecular self-healing polymer matrix for all active layers (conductor, semiconductor, and dielectric) in skin-like transistors. This design enables adhesion and intimate contact between layers, facilitating effective charge injection and transport under strain after self-healing. The active material consists of a blend of an electrically insulating supramolecular polymer with either semiconducting polymers or vapor-deposited metal nanoclusters. The self-healing process is autonomous and occurs at ambient conditions, allowing the transistors to recover from micron-scale damage (up to 4 μm) without external intervention. The transistors operate at a low drain voltage (-1 V) and maintain their performance even under 30% biaxial strain. The study demonstrates the fabrication of skin-like self-healing circuits, including NAND and NOR gates and inverters, which are critical components of arithmetic logic units. The results show that the self-healing transistors can maintain their electrical performance after damage and recovery, with a high recovery efficiency (>77%). The transistors also exhibit strain-insensitive electrical properties and can be stretched up to 30% biaxial strain without electrical disconnection. The study also demonstrates the fabrication of self-healing logic gates, including inverters, NAND, and NOR gates, which are fundamental building blocks of digital systems. The results highlight the potential of autonomous self-healing skin electronics for future applications in health monitoring, prosthetic sensory skin, medical implants, and brain-computer interfaces. The study addresses several challenges in achieving fully autonomous self-healing transistors, including low elasticity of the self-healing semiconductor, non-autonomous healing processes, difficulty in aligning limited healing areas, strain-sensitive electrical properties, and the absence of suitable self-healing electrode and dielectric materials. The study provides a promising solution to these challenges by integrating self-healing semiconductor, conductor, and dielectric materials into a single transistor device. The results demonstrate the feasibility of autonomous self-healing skin electronics for future applications in flexible and stretchable electronic devices.This study presents autonomous self-healing supramolecular polymer transistors for skin electronics. The key innovation is the use of a single supramolecular self-healing polymer matrix for all active layers (conductor, semiconductor, and dielectric) in skin-like transistors. This design enables adhesion and intimate contact between layers, facilitating effective charge injection and transport under strain after self-healing. The active material consists of a blend of an electrically insulating supramolecular polymer with either semiconducting polymers or vapor-deposited metal nanoclusters. The self-healing process is autonomous and occurs at ambient conditions, allowing the transistors to recover from micron-scale damage (up to 4 μm) without external intervention. The transistors operate at a low drain voltage (-1 V) and maintain their performance even under 30% biaxial strain. The study demonstrates the fabrication of skin-like self-healing circuits, including NAND and NOR gates and inverters, which are critical components of arithmetic logic units. The results show that the self-healing transistors can maintain their electrical performance after damage and recovery, with a high recovery efficiency (>77%). The transistors also exhibit strain-insensitive electrical properties and can be stretched up to 30% biaxial strain without electrical disconnection. The study also demonstrates the fabrication of self-healing logic gates, including inverters, NAND, and NOR gates, which are fundamental building blocks of digital systems. The results highlight the potential of autonomous self-healing skin electronics for future applications in health monitoring, prosthetic sensory skin, medical implants, and brain-computer interfaces. The study addresses several challenges in achieving fully autonomous self-healing transistors, including low elasticity of the self-healing semiconductor, non-autonomous healing processes, difficulty in aligning limited healing areas, strain-sensitive electrical properties, and the absence of suitable self-healing electrode and dielectric materials. The study provides a promising solution to these challenges by integrating self-healing semiconductor, conductor, and dielectric materials into a single transistor device. The results demonstrate the feasibility of autonomous self-healing skin electronics for future applications in flexible and stretchable electronic devices.