This paper presents the development of stretchable polymer transistors with autonomous self-healing capabilities, which are crucial for future skin-like electronic devices. The transistors consist of a blend of an electrically insulating supramolecular polymer and either semiconducting polymers or vapor-deposited metal nanoclusters. A key feature is the use of the same supramolecular self-healing polymer matrix for all active layers, ensuring adhesion and intimate contact between layers, which facilitates effective charge injection and transport under strain after self-healing. The researchers fabricated skin-like self-healing circuits, including NAND and NOR gates and inverters, demonstrating the practical application of self-healing skin electronics. The transistors exhibited strain-insensitive electrical properties and could operate at low drain voltages (~1 V) even after self-healing. The work advances the field of self-healing skin electronics by addressing the challenges of low elasticity, non-autonomous healing processes, limited healing area, strain-sensitive electrical properties, and the absence of suitable self-healing electrode and dielectric materials. The self-healing transistors were successfully integrated into active-matrix arrays and logic gates, showing excellent performance and stability under various conditions.This paper presents the development of stretchable polymer transistors with autonomous self-healing capabilities, which are crucial for future skin-like electronic devices. The transistors consist of a blend of an electrically insulating supramolecular polymer and either semiconducting polymers or vapor-deposited metal nanoclusters. A key feature is the use of the same supramolecular self-healing polymer matrix for all active layers, ensuring adhesion and intimate contact between layers, which facilitates effective charge injection and transport under strain after self-healing. The researchers fabricated skin-like self-healing circuits, including NAND and NOR gates and inverters, demonstrating the practical application of self-healing skin electronics. The transistors exhibited strain-insensitive electrical properties and could operate at low drain voltages (~1 V) even after self-healing. The work advances the field of self-healing skin electronics by addressing the challenges of low elasticity, non-autonomous healing processes, limited healing area, strain-sensitive electrical properties, and the absence of suitable self-healing electrode and dielectric materials. The self-healing transistors were successfully integrated into active-matrix arrays and logic gates, showing excellent performance and stability under various conditions.