| Yixin Deng†,*, Zhe Luo§, Nathan J. Conrad†, Han Liu†, Yongji Gong†, Sina Najmaei‡, Pulickel M. Ajayan†, Jun Lou†, Xianfan Xu§,*, Peide D. Ye†,*
A gate-tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS₂ van der Waals heterojunction is demonstrated. The diode exhibits strong current-rectifying characteristics and high photodetection responsivity. Under illumination, it achieves a maximum responsivity of 418 mA/W at 633 nm, and a photovoltaic external quantum efficiency of 0.3%. These results indicate the potential of black phosphorus and MoS₂ heterojunctions for photodetection and solar energy conversion. The diode is fabricated using chemical vapor deposition for MoS₂ and mechanical exfoliation for black phosphorus. The device shows good performance in both forward and reverse bias, with a high current rectification ratio and a low ideal factor. The photodetection responsivity is significantly higher than that of previously reported black phosphorus phototransistors and WSe₂ p-n diodes. The device also demonstrates photovoltaic power generation with a peak external quantum efficiency of 0.3%. The results suggest that black phosphorus-based heterojunctions could be used for large-area transparent and flexible solar cells and photodetectors. The study highlights the potential of van der Waals heterojunctions for next-generation optoelectronic devices.A gate-tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS₂ van der Waals heterojunction is demonstrated. The diode exhibits strong current-rectifying characteristics and high photodetection responsivity. Under illumination, it achieves a maximum responsivity of 418 mA/W at 633 nm, and a photovoltaic external quantum efficiency of 0.3%. These results indicate the potential of black phosphorus and MoS₂ heterojunctions for photodetection and solar energy conversion. The diode is fabricated using chemical vapor deposition for MoS₂ and mechanical exfoliation for black phosphorus. The device shows good performance in both forward and reverse bias, with a high current rectification ratio and a low ideal factor. The photodetection responsivity is significantly higher than that of previously reported black phosphorus phototransistors and WSe₂ p-n diodes. The device also demonstrates photovoltaic power generation with a peak external quantum efficiency of 0.3%. The results suggest that black phosphorus-based heterojunctions could be used for large-area transparent and flexible solar cells and photodetectors. The study highlights the potential of van der Waals heterojunctions for next-generation optoelectronic devices.