Bright and stable near-infrared lead-free perovskite light-emitting diodes

Bright and stable near-infrared lead-free perovskite light-emitting diodes

5 January 2024 | Fanglong Yuan, Giulia Folpini, Tianjun Liu, Utkarsh Singh, Antonella Treglia, Jia Wei Melvin Lim, Johan Klarbring, Sergei I. Simak, Igor A. Abrikosov, Tze Chien Sum, Annamaria Petrozza & Feng Gao
This study presents the development of long-wavelength near-infrared (NIR) light-emitting diodes (LEDs) with peak emission wavelengths beyond 900 nm, which are crucial for applications such as night vision, biomedical imaging, sensing, and optical communications. The researchers focus on all-inorganic tin perovskites (CsSnI3) and improve their performance by controlling p-doping through the crystallization process of perovskite precursors in tin-rich conditions. The resulting NIR LEDs exhibit a peak emission wavelength of 948 nm, high radiance of 226 W sr−1 m−2, and a long operational half-life of 39.5 hours at a high constant current density of 100 mA cm−2. The study demonstrates that efficient and stable NIR LEDs operating at high current densities can open up new opportunities for electrically pumped lasers. The improved performance is attributed to the controlled p-doping and reduced trap density, which enhance radiative efficiency and stability. The findings address critical challenges in the practical applications of long-wavelength NIR LEDs, marking a significant step forward in their development.This study presents the development of long-wavelength near-infrared (NIR) light-emitting diodes (LEDs) with peak emission wavelengths beyond 900 nm, which are crucial for applications such as night vision, biomedical imaging, sensing, and optical communications. The researchers focus on all-inorganic tin perovskites (CsSnI3) and improve their performance by controlling p-doping through the crystallization process of perovskite precursors in tin-rich conditions. The resulting NIR LEDs exhibit a peak emission wavelength of 948 nm, high radiance of 226 W sr−1 m−2, and a long operational half-life of 39.5 hours at a high constant current density of 100 mA cm−2. The study demonstrates that efficient and stable NIR LEDs operating at high current densities can open up new opportunities for electrically pumped lasers. The improved performance is attributed to the controlled p-doping and reduced trap density, which enhance radiative efficiency and stability. The findings address critical challenges in the practical applications of long-wavelength NIR LEDs, marking a significant step forward in their development.
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