This article presents the development of near-infrared (NIR) light-emitting diodes (LEDs) with wavelengths beyond 900 nm using all-inorganic tin perovskite CsSnI₃. The study addresses the challenges of low radiance and poor operational stability in state-of-the-art long-wavelength NIR LEDs. By controlling the crystallization process of CsSnI₃ precursors in tin-rich conditions, the researchers achieved improved performance through rational manipulation of p-doping. The resulting LEDs emit at 948 nm with a high radiance of 226 W sr⁻¹ m⁻² and a long operational half-lifetime of 39.5 h at a high current density of 100 mA cm⁻². The study demonstrates that intrinsic p-doping in tin-based perovskites can be beneficial for achieving high-performance NIR LEDs when controlled. The incorporation of NPTU and SnF₂ reduced carrier trap density and improved radiative efficiency. The LEDs also showed excellent stability, with a half-lifetime significantly longer than that of other soft-material-based NIR LEDs. The study highlights the potential of tin-based perovskites for high-performance NIR LEDs and opens new opportunities for electrically pumped lasers. The research provides insights into the electronic structure and recombination dynamics of tin-based perovskites, showing that they have a much lower Auger recombination rate than lead-based perovskites, which is beneficial for light emission. The findings suggest that tin-based perovskites could be a promising alternative for high-performance NIR LEDs.This article presents the development of near-infrared (NIR) light-emitting diodes (LEDs) with wavelengths beyond 900 nm using all-inorganic tin perovskite CsSnI₃. The study addresses the challenges of low radiance and poor operational stability in state-of-the-art long-wavelength NIR LEDs. By controlling the crystallization process of CsSnI₃ precursors in tin-rich conditions, the researchers achieved improved performance through rational manipulation of p-doping. The resulting LEDs emit at 948 nm with a high radiance of 226 W sr⁻¹ m⁻² and a long operational half-lifetime of 39.5 h at a high current density of 100 mA cm⁻². The study demonstrates that intrinsic p-doping in tin-based perovskites can be beneficial for achieving high-performance NIR LEDs when controlled. The incorporation of NPTU and SnF₂ reduced carrier trap density and improved radiative efficiency. The LEDs also showed excellent stability, with a half-lifetime significantly longer than that of other soft-material-based NIR LEDs. The study highlights the potential of tin-based perovskites for high-performance NIR LEDs and opens new opportunities for electrically pumped lasers. The research provides insights into the electronic structure and recombination dynamics of tin-based perovskites, showing that they have a much lower Auger recombination rate than lead-based perovskites, which is beneficial for light emission. The findings suggest that tin-based perovskites could be a promising alternative for high-performance NIR LEDs.