This article presents a breakthrough in terahertz technology through the development of a broadband graphene terahertz modulator enabled by intraband transitions. The modulator achieves exceptional performance, with more than 2.5 times superior modulation than prior broadband intensity modulators. It is the first graphene-based device enabled solely by intraband transitions. The modulator uses single-layer graphene with extremely low intrinsic signal attenuation, allowing for efficient modulation of terahertz waves at room temperature. The unique advantages of graphene, including its ease of integration and excellent transport properties of holes, make it a promising material for terahertz applications. The modulator is based on the principle of intraband transitions in graphene, which dominate in the terahertz range. The optical conductivity of graphene is well described by the Drude model in this range. The device consists of a single-layer graphene-based prototype with an intensity modulation depth of 15% and a modulation frequency of 20 kHz, using a 570-GHz carrier at room temperature. The result represents a significant improvement over previously reported devices based on AlGaAs/GaAs structures. The modulator's performance is characterized by a flat intensity modulation depth of ~16% over the 570–630 GHz frequency band. The device's performance is also influenced by the substrate effects, which need to be minimized for optimal performance. The modulator's design allows for high modulation speed, with the potential for further improvements through better preparation of graphene. The study demonstrates the potential of graphene for terahertz modulation, with applications in various fields of terahertz technology. The modulator's design is promising for applications in compact and cost-effective transceivers in the terahertz band. The results highlight the potential of graphene-based modulators for future terahertz technologies.This article presents a breakthrough in terahertz technology through the development of a broadband graphene terahertz modulator enabled by intraband transitions. The modulator achieves exceptional performance, with more than 2.5 times superior modulation than prior broadband intensity modulators. It is the first graphene-based device enabled solely by intraband transitions. The modulator uses single-layer graphene with extremely low intrinsic signal attenuation, allowing for efficient modulation of terahertz waves at room temperature. The unique advantages of graphene, including its ease of integration and excellent transport properties of holes, make it a promising material for terahertz applications. The modulator is based on the principle of intraband transitions in graphene, which dominate in the terahertz range. The optical conductivity of graphene is well described by the Drude model in this range. The device consists of a single-layer graphene-based prototype with an intensity modulation depth of 15% and a modulation frequency of 20 kHz, using a 570-GHz carrier at room temperature. The result represents a significant improvement over previously reported devices based on AlGaAs/GaAs structures. The modulator's performance is characterized by a flat intensity modulation depth of ~16% over the 570–630 GHz frequency band. The device's performance is also influenced by the substrate effects, which need to be minimized for optimal performance. The modulator's design allows for high modulation speed, with the potential for further improvements through better preparation of graphene. The study demonstrates the potential of graphene for terahertz modulation, with applications in various fields of terahertz technology. The modulator's design is promising for applications in compact and cost-effective transceivers in the terahertz band. The results highlight the potential of graphene-based modulators for future terahertz technologies.