The paper extends the concept of memristive systems to capacitive and inductive elements, known as memcapacitors and meminductors, respectively. These elements exhibit pinched hysteretic loops in their constitutive variables: current-voltage for memristors, charge-voltage for memcapacitors, and current-flux for meminductors. The authors argue that these devices are likely to be common at the nanoscale, where the dynamical properties of electrons and ions depend on the system's history. These elements and their combinations in circuits offer new functionalities, particularly in neuromorphic devices for simulating learning, adaptive, and spontaneous behavior. The paper provides definitions, properties, and examples of these devices, highlighting their unique characteristics and potential applications.The paper extends the concept of memristive systems to capacitive and inductive elements, known as memcapacitors and meminductors, respectively. These elements exhibit pinched hysteretic loops in their constitutive variables: current-voltage for memristors, charge-voltage for memcapacitors, and current-flux for meminductors. The authors argue that these devices are likely to be common at the nanoscale, where the dynamical properties of electrons and ions depend on the system's history. These elements and their combinations in circuits offer new functionalities, particularly in neuromorphic devices for simulating learning, adaptive, and spontaneous behavior. The paper provides definitions, properties, and examples of these devices, highlighting their unique characteristics and potential applications.