This study presents a universal surface-passivation method for InAs colloidal quantum dots (CQDs) using intermediate phase transfer (IPT), which exchanges native ligands with aromatic ligands. IPT results in highly stable CQD ink and allows for the attachment of various reactivity ligands, enhancing colloidal stability in green solvents. The method is applied to fabricate near-infrared (NIR) photodetectors, demonstrating significant improvements in performance compared to conventional methods. The IPT-treated CQDs exhibit enhanced surface passivation, leading to better modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with fast rise/fall response times (≈12/36 ns). The optimal CQD photodiode shows one of the highest figure of merits (FOMs) among solution-processed nontoxic semiconductors in the NIR wavelength range, outperforming organics, perovskites, and other CQDs. The study highlights the potential of IPT for fabricating efficient IR CQD optoelectronics using RoHS-compatible materials.This study presents a universal surface-passivation method for InAs colloidal quantum dots (CQDs) using intermediate phase transfer (IPT), which exchanges native ligands with aromatic ligands. IPT results in highly stable CQD ink and allows for the attachment of various reactivity ligands, enhancing colloidal stability in green solvents. The method is applied to fabricate near-infrared (NIR) photodetectors, demonstrating significant improvements in performance compared to conventional methods. The IPT-treated CQDs exhibit enhanced surface passivation, leading to better modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with fast rise/fall response times (≈12/36 ns). The optimal CQD photodiode shows one of the highest figure of merits (FOMs) among solution-processed nontoxic semiconductors in the NIR wavelength range, outperforming organics, perovskites, and other CQDs. The study highlights the potential of IPT for fabricating efficient IR CQD optoelectronics using RoHS-compatible materials.