This study presents a universal surface-passivation method for InAs colloidal quantum dots (CQDs) using intermediate phase transfer (IPT), which enables the fabrication of high-performance near-infrared (NIR) photodetectors. The IPT method involves exchanging native ligands with aromatic ligands on the CQD surface, resulting in highly stable CQD ink. By dispersing the ligands in green solvents, desirable surface ligands with various reactivities can be obtained. The resulting CQD ink exhibits high colloidal stability, 25-fold higher than that of conventional ligand-exchanged CQD inks. The study demonstrates the fabrication of InAs CQD-based diode-type NIR photodetectors using solution processes. Careful surface ligand control via IPT enables modulation of surface-mediated photomultiplication, resulting in a notable gain control up to approximately 10 with a fast rise/fall response time (≈12/36 ns). The optimal CQD photodiode yields one of the highest figures of merit (FOM) among all previously reported solution-processed nontoxic semiconductors in the NIR wavelength range. The IPT method allows for the use of various organic ligands with low to high reactivity on the CQD surface and enables the dispersion of CQDs in various green solvents. Surface characterization using XPS and FTIR confirms the successful passivation of the CQD surface with thiol ligands. The study also shows that the IPT method enables efficient surface passivation, leading to improved charge extraction and increased responsivity. The photodetectors fabricated using the IPT method exhibit high external quantum efficiency (EQE) and fast response times. The EQE of the IPT-treated InAs CQD photodiode reaches 292% at -1 V, with a rise/fall time of 12.4/36.1 ns. The study also demonstrates that the IPT method enables surface-mediated photomultiplication, which minimizes the trade-off between gain and response time, resulting in improved performance metrics. The results show that the IPT method is a promising strategy for achieving improved passivation with various ligands, resulting in high colloidal stability in various solvents. The study highlights the potential of the universal ligand exchange method for fabricating efficient infrared CQD optoelectronics using RoHS-compatible materials.This study presents a universal surface-passivation method for InAs colloidal quantum dots (CQDs) using intermediate phase transfer (IPT), which enables the fabrication of high-performance near-infrared (NIR) photodetectors. The IPT method involves exchanging native ligands with aromatic ligands on the CQD surface, resulting in highly stable CQD ink. By dispersing the ligands in green solvents, desirable surface ligands with various reactivities can be obtained. The resulting CQD ink exhibits high colloidal stability, 25-fold higher than that of conventional ligand-exchanged CQD inks. The study demonstrates the fabrication of InAs CQD-based diode-type NIR photodetectors using solution processes. Careful surface ligand control via IPT enables modulation of surface-mediated photomultiplication, resulting in a notable gain control up to approximately 10 with a fast rise/fall response time (≈12/36 ns). The optimal CQD photodiode yields one of the highest figures of merit (FOM) among all previously reported solution-processed nontoxic semiconductors in the NIR wavelength range. The IPT method allows for the use of various organic ligands with low to high reactivity on the CQD surface and enables the dispersion of CQDs in various green solvents. Surface characterization using XPS and FTIR confirms the successful passivation of the CQD surface with thiol ligands. The study also shows that the IPT method enables efficient surface passivation, leading to improved charge extraction and increased responsivity. The photodetectors fabricated using the IPT method exhibit high external quantum efficiency (EQE) and fast response times. The EQE of the IPT-treated InAs CQD photodiode reaches 292% at -1 V, with a rise/fall time of 12.4/36.1 ns. The study also demonstrates that the IPT method enables surface-mediated photomultiplication, which minimizes the trade-off between gain and response time, resulting in improved performance metrics. The results show that the IPT method is a promising strategy for achieving improved passivation with various ligands, resulting in high colloidal stability in various solvents. The study highlights the potential of the universal ligand exchange method for fabricating efficient infrared CQD optoelectronics using RoHS-compatible materials.