This study investigates the damage evolution and removal behaviors of GaN crystals during double-grits grinding using molecular dynamics (MD) simulations. The simulations examine the grinding force, coefficient of friction, stress distribution, plastic damage, and abrasive damage under different interacted distances between abrasives. The results show that the damage depth of the ground subsurface increases with the transverse interacted distance, while the grinding force, stress, and abrasive wear increase as the transverse interacted distance increases. However, there is no clear correlation between the transverse interacted distance and the number of atoms in the phase transition or dislocation length. The study also validates the simulated damage results through cross-sectional transmission electron microscopy (TEM), revealing amorphous atoms, high-pressure phase transitions, dislocations, stacking faults, and lattice distortions. The results indicate that appropriate interacted distances between abrasives can reduce grinding force, coefficient of friction, stress, subsurface damage, and abrasive wear. The study highlights the importance of understanding the coupling between abrasives during grinding to improve the surface quality and reduce subsurface damage of GaN crystals. The findings provide insights into the damage accumulation and material removal mechanisms during grinding and can guide the design of ordered abrasive wheels for efficient and high-quality grinding of GaN.This study investigates the damage evolution and removal behaviors of GaN crystals during double-grits grinding using molecular dynamics (MD) simulations. The simulations examine the grinding force, coefficient of friction, stress distribution, plastic damage, and abrasive damage under different interacted distances between abrasives. The results show that the damage depth of the ground subsurface increases with the transverse interacted distance, while the grinding force, stress, and abrasive wear increase as the transverse interacted distance increases. However, there is no clear correlation between the transverse interacted distance and the number of atoms in the phase transition or dislocation length. The study also validates the simulated damage results through cross-sectional transmission electron microscopy (TEM), revealing amorphous atoms, high-pressure phase transitions, dislocations, stacking faults, and lattice distortions. The results indicate that appropriate interacted distances between abrasives can reduce grinding force, coefficient of friction, stress, subsurface damage, and abrasive wear. The study highlights the importance of understanding the coupling between abrasives during grinding to improve the surface quality and reduce subsurface damage of GaN crystals. The findings provide insights into the damage accumulation and material removal mechanisms during grinding and can guide the design of ordered abrasive wheels for efficient and high-quality grinding of GaN.