Defect scattering can enhance phonon transport at the nanoscale, contrary to the conventional understanding that defects suppress thermal transport. This study uses molecular dynamics (MD) and Boltzmann transport equation (BTE) simulations to show that introducing defects in a nanoscale heating zone can increase thermal conductance by up to 75%. The mechanism involves defect scattering redirecting phonons randomly to restore directional equilibrium, counteracting the directional nonequilibrium caused by overpopulated oblique-propagating phonons in defect-free systems. This effect is observed across a wide range of temperatures, materials, and sizes. The findings suggest an unconventional strategy for enhancing thermal transport by manipulating phonon directional nonequilibrium. The study also demonstrates that defect scattering can enhance thermal transport in various materials, including Si, SiC, and GaN, and across different temperatures and sizes. The results highlight the importance of phonon directional nonequilibrium in thermal transport and provide new insights into the role of defect scattering in enhancing thermal conductivity. The study further shows that the effect is robust across different simulation methods and conditions, including different boundary conditions and phonon populations. The findings have implications for improving thermal management in nanoscale devices and electronic systems.Defect scattering can enhance phonon transport at the nanoscale, contrary to the conventional understanding that defects suppress thermal transport. This study uses molecular dynamics (MD) and Boltzmann transport equation (BTE) simulations to show that introducing defects in a nanoscale heating zone can increase thermal conductance by up to 75%. The mechanism involves defect scattering redirecting phonons randomly to restore directional equilibrium, counteracting the directional nonequilibrium caused by overpopulated oblique-propagating phonons in defect-free systems. This effect is observed across a wide range of temperatures, materials, and sizes. The findings suggest an unconventional strategy for enhancing thermal transport by manipulating phonon directional nonequilibrium. The study also demonstrates that defect scattering can enhance thermal transport in various materials, including Si, SiC, and GaN, and across different temperatures and sizes. The results highlight the importance of phonon directional nonequilibrium in thermal transport and provide new insights into the role of defect scattering in enhancing thermal conductivity. The study further shows that the effect is robust across different simulation methods and conditions, including different boundary conditions and phonon populations. The findings have implications for improving thermal management in nanoscale devices and electronic systems.