This study investigates the impact of defect scattering on thermal transport at the nanoscale. Using molecular dynamics (MD) simulations and the phonon Boltzmann transport equation (BTE), the researchers demonstrate that introducing defects in a heating zone can enhance thermal conductance by up to 75%. In defect-free systems, the heating zone exhibits directional nonequilibrium with overpopulated oblique-propagating phonons, which suppress thermal transport. However, defects redirect these phonons randomly, restoring directional equilibrium and enhancing thermal conductance. This mechanism is observed across a wide range of temperatures, materials (Si, SiC, GaN), and sizes. The findings provide a new strategy for enhancing thermal transport by manipulating phonon directional nonequilibrium, which could be applied to various electronic devices, including computational and power transistors.This study investigates the impact of defect scattering on thermal transport at the nanoscale. Using molecular dynamics (MD) simulations and the phonon Boltzmann transport equation (BTE), the researchers demonstrate that introducing defects in a heating zone can enhance thermal conductance by up to 75%. In defect-free systems, the heating zone exhibits directional nonequilibrium with overpopulated oblique-propagating phonons, which suppress thermal transport. However, defects redirect these phonons randomly, restoring directional equilibrium and enhancing thermal conductance. This mechanism is observed across a wide range of temperatures, materials (Si, SiC, GaN), and sizes. The findings provide a new strategy for enhancing thermal transport by manipulating phonon directional nonequilibrium, which could be applied to various electronic devices, including computational and power transistors.