This study demonstrates that topological flat minibands can be engineered in narrow gap semiconductor films using an external electrostatic superlattice potential. The research shows that these bands can host correlated topological phases, such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases, at zero magnetic field. The method involves creating a periodic charge distribution in a control layer that imparts an electrostatic superlattice potential on a nearby active layer composed of a narrow gap semiconductor film. This potential leads to the formation of topological minibands with tunable bandwidth and topology. The study uses a two-band k·p Hamiltonian to model the electronic structure and shows that an electrostatic superlattice potential can lead to strong hybridization of the parent conduction and valence bands, resulting in the formation of topological minibands. The research also demonstrates that robust integer and fractionalized topological states can be realized with realistic model parameters. The findings suggest a pathway to realize fractionalized topological states in a broad range of materials. The study highlights the potential of using electrostatic engineering to create topological and fractionalized phases in semiconductor films, offering new possibilities for engineered quantum materials with greater flexibility and richness than existing moiré materials. The research also discusses the potential applications of this method in various materials, including 3D topological insulators, IV-VI semiconductors, and 3D Dirac semimetals. The study concludes that the proposed mechanism provides a general approach for realizing topological and fractionalized phases in narrow gap semiconductor films using an electrostatic superlattice potential.This study demonstrates that topological flat minibands can be engineered in narrow gap semiconductor films using an external electrostatic superlattice potential. The research shows that these bands can host correlated topological phases, such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases, at zero magnetic field. The method involves creating a periodic charge distribution in a control layer that imparts an electrostatic superlattice potential on a nearby active layer composed of a narrow gap semiconductor film. This potential leads to the formation of topological minibands with tunable bandwidth and topology. The study uses a two-band k·p Hamiltonian to model the electronic structure and shows that an electrostatic superlattice potential can lead to strong hybridization of the parent conduction and valence bands, resulting in the formation of topological minibands. The research also demonstrates that robust integer and fractionalized topological states can be realized with realistic model parameters. The findings suggest a pathway to realize fractionalized topological states in a broad range of materials. The study highlights the potential of using electrostatic engineering to create topological and fractionalized phases in semiconductor films, offering new possibilities for engineered quantum materials with greater flexibility and richness than existing moiré materials. The research also discusses the potential applications of this method in various materials, including 3D topological insulators, IV-VI semiconductors, and 3D Dirac semimetals. The study concludes that the proposed mechanism provides a general approach for realizing topological and fractionalized phases in narrow gap semiconductor films using an electrostatic superlattice potential.