The paper presents a comprehensive study on the use of extreme ultraviolet (EUV) light to induce hydrogen desorption from a monohydride Si(001):H surface, a crucial step for large-scale patterning of silicon quantum devices. The authors demonstrate that hydrogen desorption is primarily mediated by secondary electrons from valence band excitations, consistent with a non-linear differential equation. This mechanism is compatible with current 13.5 nm EUV standards and allows for useful exposure times of about three minutes with 300 W EUV sources. The study combines techniques such as scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and photoemission electron microscopy (PEEM) to quantify the desorption characteristics. The results show that the desorption rate is independent of substrate temperature and scales with secondary electron production, indicating that valence band excitations are the primary source of secondary electrons mediating the desorption process. The spatial resolution of EUV-based hydrogen desorption lithography is estimated to be a few nanometers, which is sufficient for fabricating δ-layer interconnects and localized dopant δ-layers in silicon quantum devices. The paper also outlines a proposed laboratory process flow for patterning silicon quantum devices, including stages for surface preparation, EUV lithography, STM or EUV lithography for quantum device patterning, and dopant incorporation and encapsulation.The paper presents a comprehensive study on the use of extreme ultraviolet (EUV) light to induce hydrogen desorption from a monohydride Si(001):H surface, a crucial step for large-scale patterning of silicon quantum devices. The authors demonstrate that hydrogen desorption is primarily mediated by secondary electrons from valence band excitations, consistent with a non-linear differential equation. This mechanism is compatible with current 13.5 nm EUV standards and allows for useful exposure times of about three minutes with 300 W EUV sources. The study combines techniques such as scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and photoemission electron microscopy (PEEM) to quantify the desorption characteristics. The results show that the desorption rate is independent of substrate temperature and scales with secondary electron production, indicating that valence band excitations are the primary source of secondary electrons mediating the desorption process. The spatial resolution of EUV-based hydrogen desorption lithography is estimated to be a few nanometers, which is sufficient for fabricating δ-layer interconnects and localized dopant δ-layers in silicon quantum devices. The paper also outlines a proposed laboratory process flow for patterning silicon quantum devices, including stages for surface preparation, EUV lithography, STM or EUV lithography for quantum device patterning, and dopant incorporation and encapsulation.