This article presents a study on EUV-induced hydrogen desorption for silicon quantum device patterning. The research demonstrates that extreme ultraviolet (EUV) light can remove hydrogen from a monohydride Si(001):H surface, enabling precise, large-scale patterning without traditional resists. The desorption is induced by secondary electrons from valence band excitations, consistent with the 13.5 nm EUV standard for photolithography. The study quantifies desorption characteristics using techniques like STM, XPS, and XPEEM, showing that desorption occurs via valence band excitations, with secondary electrons directly exciting Si-H bond electrons. The results indicate that EUV photons with energies around 93 and 106 eV can effectively desorb hydrogen, with a desorption cross-section of ~10^-20 cm². The desorption rate is found to be linear with photon flux up to 10^16 ph/s/cm², and sublinear beyond that. XPEEM imaging confirms hydrogen desorption, showing a contrast difference between exposed and unexposed areas, with the 106 eV exposure being more effective. The desorption mechanism is attributed to secondary electrons, which mediate the Si-H bond scission. The study concludes that EUV-based hydrogen desorption offers a promising method for patterning silicon surfaces, enabling the fabrication of quantum devices with high precision and scalability. The results highlight the potential of EUV lithography for quantum computing and other advanced semiconductor applications.This article presents a study on EUV-induced hydrogen desorption for silicon quantum device patterning. The research demonstrates that extreme ultraviolet (EUV) light can remove hydrogen from a monohydride Si(001):H surface, enabling precise, large-scale patterning without traditional resists. The desorption is induced by secondary electrons from valence band excitations, consistent with the 13.5 nm EUV standard for photolithography. The study quantifies desorption characteristics using techniques like STM, XPS, and XPEEM, showing that desorption occurs via valence band excitations, with secondary electrons directly exciting Si-H bond electrons. The results indicate that EUV photons with energies around 93 and 106 eV can effectively desorb hydrogen, with a desorption cross-section of ~10^-20 cm². The desorption rate is found to be linear with photon flux up to 10^16 ph/s/cm², and sublinear beyond that. XPEEM imaging confirms hydrogen desorption, showing a contrast difference between exposed and unexposed areas, with the 106 eV exposure being more effective. The desorption mechanism is attributed to secondary electrons, which mediate the Si-H bond scission. The study concludes that EUV-based hydrogen desorption offers a promising method for patterning silicon surfaces, enabling the fabrication of quantum devices with high precision and scalability. The results highlight the potential of EUV lithography for quantum computing and other advanced semiconductor applications.