The paper describes the discovery and characterization of monocrystalline graphitic films, known as few-layer graphene (FLG), which are just a few atomic layers thick but stable under ambient conditions. These films exhibit metallic properties and a strong ambipolar electric-field effect, allowing for the induction of high carrier concentrations (up to \(10^{12} \, \text{cm}^{-3}\)) and room-temperature mobilities (\(\approx 10,000 \, \text{cm}^2 / \text{Vs}\)) through the application of gate voltage. The authors demonstrate a metallic field-effect transistor using FLG, which can switch between 2D electron and hole gases. The electronic properties of FLG are explained by a model of a 2D metal with a small overlap between conductance and valence bands. The films show ballistic transport at submicron distances, and their quality is further confirmed by Shubnikov-de Haas oscillations, indicating 2D electronic transport. The findings highlight the potential of FLG as a scalable and high-performance material for electronic devices.The paper describes the discovery and characterization of monocrystalline graphitic films, known as few-layer graphene (FLG), which are just a few atomic layers thick but stable under ambient conditions. These films exhibit metallic properties and a strong ambipolar electric-field effect, allowing for the induction of high carrier concentrations (up to \(10^{12} \, \text{cm}^{-3}\)) and room-temperature mobilities (\(\approx 10,000 \, \text{cm}^2 / \text{Vs}\)) through the application of gate voltage. The authors demonstrate a metallic field-effect transistor using FLG, which can switch between 2D electron and hole gases. The electronic properties of FLG are explained by a model of a 2D metal with a small overlap between conductance and valence bands. The films show ballistic transport at submicron distances, and their quality is further confirmed by Shubnikov-de Haas oscillations, indicating 2D electronic transport. The findings highlight the potential of FLG as a scalable and high-performance material for electronic devices.