This paper reports the electric field effect in few-layer graphene (FLG), a naturally occurring two-dimensional material. FLG is a single layer of carbon atoms arranged in a hexagonal lattice, and it is stable under ambient conditions. The study shows that FLG is a two-dimensional semimetal with a small overlap between valence and conduction bands, and it exhibits a strong ambipolar electric-field effect, allowing for the induction of electrons and holes at high concentrations and with high mobility. The paper describes the electronic properties of FLG and demonstrates a metallic field-effect transistor, which exhibits ballistic transport at submicron distances even at room temperature. FLG was prepared by mechanical exfoliation of highly-oriented pyrolytic graphite. The films were processed into multi-terminal Hall bar devices on top of an oxidized Si substrate to study their electronic properties. The films were found to have high quality, with 2D electronic transport being ballistic at submicron distances. The electronic properties of FLG were studied using resistivity and Hall coefficient measurements, which showed that FLG is a hole metal at zero gate voltage. However, this could be due to unintentional doping by absorbed gas molecules. Annealing in vacuum was found to reduce the peak shift, and exposure to water vapor or NH3 led to p- and n-doping, respectively. The carrier mobilities in FLG were determined from field-effect and magnetoresistance measurements and were found to be high, ranging from 3,000 to 10,000 cm²/V·s. The mean free path was found to be about 0.4 μm, which is surprising given the thinness of the 2D gas. The study also confirmed that electronic transport in FLG is strictly 2D, as evidenced by Shubnikov-de Haas oscillations. These oscillations showed a linear dependence on gate voltage, indicating that the Fermi energies of holes and electrons are proportional to their concentrations. This confirms the 2D nature of the charge carriers in FLG. The band overlap in FLG was found to be small, varying from 4 to 20 meV for different samples. This indicates a different number of graphene layers involved. The study also showed that the band overlap decreases with decreasing number of graphene layers, consistent with the theory that single-layer graphene is a zero-gap semiconductor. The paper concludes that graphene is not only the first but also probably the best possible metal for such applications, offering ballistic transport, linear I-V characteristics, and huge sustainable currents.This paper reports the electric field effect in few-layer graphene (FLG), a naturally occurring two-dimensional material. FLG is a single layer of carbon atoms arranged in a hexagonal lattice, and it is stable under ambient conditions. The study shows that FLG is a two-dimensional semimetal with a small overlap between valence and conduction bands, and it exhibits a strong ambipolar electric-field effect, allowing for the induction of electrons and holes at high concentrations and with high mobility. The paper describes the electronic properties of FLG and demonstrates a metallic field-effect transistor, which exhibits ballistic transport at submicron distances even at room temperature. FLG was prepared by mechanical exfoliation of highly-oriented pyrolytic graphite. The films were processed into multi-terminal Hall bar devices on top of an oxidized Si substrate to study their electronic properties. The films were found to have high quality, with 2D electronic transport being ballistic at submicron distances. The electronic properties of FLG were studied using resistivity and Hall coefficient measurements, which showed that FLG is a hole metal at zero gate voltage. However, this could be due to unintentional doping by absorbed gas molecules. Annealing in vacuum was found to reduce the peak shift, and exposure to water vapor or NH3 led to p- and n-doping, respectively. The carrier mobilities in FLG were determined from field-effect and magnetoresistance measurements and were found to be high, ranging from 3,000 to 10,000 cm²/V·s. The mean free path was found to be about 0.4 μm, which is surprising given the thinness of the 2D gas. The study also confirmed that electronic transport in FLG is strictly 2D, as evidenced by Shubnikov-de Haas oscillations. These oscillations showed a linear dependence on gate voltage, indicating that the Fermi energies of holes and electrons are proportional to their concentrations. This confirms the 2D nature of the charge carriers in FLG. The band overlap in FLG was found to be small, varying from 4 to 20 meV for different samples. This indicates a different number of graphene layers involved. The study also showed that the band overlap decreases with decreasing number of graphene layers, consistent with the theory that single-layer graphene is a zero-gap semiconductor. The paper concludes that graphene is not only the first but also probably the best possible metal for such applications, offering ballistic transport, linear I-V characteristics, and huge sustainable currents.