A.D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, T. Schneider, M. Gabay, S. Thiel, G. Hammerl, J. Mannhart, J.-M. Triscone, et al. have studied the electric field control of the ground state of the LaAlO3/SrTiO3 interface. They found that the electric field can modulate the carrier density, enabling the on/off switching of superconductivity and driving a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). The magnetotransport properties in the insulating state are consistent with weak localisation and do not show evidence for magnetism. The electric field control of superconductivity opens the way to the development of novel mesoscopic superconducting circuits. The LaAlO3/SrTiO3 interface is a promising system for studying novel electronic phases. Two possible ground states have been experimentally identified: a magnetic state and a 2D superconducting condensate. The electric field effect allows the tuning of the carrier density, which is crucial for understanding the system's phase diagram. The study shows that the ground state of the system is sensitive to small changes in carrier concentration and/or disorder. Electrostatic doping is an ideal technique for this purpose, as it allows the tuning of the carrier density while preserving the oxygen concentration and disorder landscape. The researchers prepared LaAlO3/SrTiO3 superconducting interfaces and field effect devices. They measured the differential capacitance of the device as a function of the applied gate voltage, which allowed them to evaluate the modulation of the carrier density. The results show that the electric field effect is an excellent tool to probe the phase diagram of the system. The sheet resistance was measured for various gate voltages, revealing a quantum phase transition between a superconducting and an insulating phase at the LaAlO3/SrTiO3 interface. The critical temperature versus carrier density phase diagram was mapped, showing that the critical temperature first increases, reaches a maximum at around 310 mK, and then decreases to zero. This critical line ends at Vc ≈ -140 V, where the system undergoes a QPT. The study also shows that the approach to quantum criticality is well described by zν̄ = 2/3, which is compatible with the 3D-XY model. The results suggest that the system is in a clean (or weakly disordered) state where quantum fluctuations dominate. The study also investigates the insulating region of the phase diagram, where the variation of the conductance can be explained by weak localisation. The results show a large negative magnetoresistance that increases as we move more deeply into the insulating phase. The field effect tuning of the electronic properties of the LaA.D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, T. Schneider, M. Gabay, S. Thiel, G. Hammerl, J. Mannhart, J.-M. Triscone, et al. have studied the electric field control of the ground state of the LaAlO3/SrTiO3 interface. They found that the electric field can modulate the carrier density, enabling the on/off switching of superconductivity and driving a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). The magnetotransport properties in the insulating state are consistent with weak localisation and do not show evidence for magnetism. The electric field control of superconductivity opens the way to the development of novel mesoscopic superconducting circuits. The LaAlO3/SrTiO3 interface is a promising system for studying novel electronic phases. Two possible ground states have been experimentally identified: a magnetic state and a 2D superconducting condensate. The electric field effect allows the tuning of the carrier density, which is crucial for understanding the system's phase diagram. The study shows that the ground state of the system is sensitive to small changes in carrier concentration and/or disorder. Electrostatic doping is an ideal technique for this purpose, as it allows the tuning of the carrier density while preserving the oxygen concentration and disorder landscape. The researchers prepared LaAlO3/SrTiO3 superconducting interfaces and field effect devices. They measured the differential capacitance of the device as a function of the applied gate voltage, which allowed them to evaluate the modulation of the carrier density. The results show that the electric field effect is an excellent tool to probe the phase diagram of the system. The sheet resistance was measured for various gate voltages, revealing a quantum phase transition between a superconducting and an insulating phase at the LaAlO3/SrTiO3 interface. The critical temperature versus carrier density phase diagram was mapped, showing that the critical temperature first increases, reaches a maximum at around 310 mK, and then decreases to zero. This critical line ends at Vc ≈ -140 V, where the system undergoes a QPT. The study also shows that the approach to quantum criticality is well described by zν̄ = 2/3, which is compatible with the 3D-XY model. The results suggest that the system is in a clean (or weakly disordered) state where quantum fluctuations dominate. The study also investigates the insulating region of the phase diagram, where the variation of the conductance can be explained by weak localisation. The results show a large negative magnetoresistance that increases as we move more deeply into the insulating phase. The field effect tuning of the electronic properties of the La