This study investigates the electric field effect (EFE) on electron-phonon coupling in graphene using low-temperature Raman spectroscopy. The EFE, which modulates carrier density in graphene, significantly affects the optical phonons, particularly the G band (long wavelength phonon). The results show that the phonon frequency and line-width are sensitive to the EFE-modulated Fermi energy, revealing the particle-hole symmetry of massless Dirac fermions. The linear dependence of phonon frequency on Fermi energy is attributed to the electron-phonon coupling of Dirac fermions. The interaction between electrons and lattice vibrations is a fundamental aspect of condensed matter physics. In graphene, this interaction plays a key role in various phenomena, including photoemission spectra anomalies, high-energy electron transport in carbon nanotubes, and phonon structures in graphite and carbon nanotubes. Traditional methods for studying electron-phonon interactions involve chemical doping, but the EFE provides an effective alternative for tuning carrier density in low-dimensional systems. The study uses Raman spectroscopy to probe the EFE in single-layer graphene and the phonon dynamics associated with 2D Dirac fermions. The G band, a doubly degenerate optical phonon with E2g symmetry at ~1580 cm⁻¹, is found to be highly sensitive to the EFE. The D* band, a second-order band at ~2700 cm⁻¹, shows a smaller response to the EFE. The G band's sensitivity to small wavevector particle-hole pairs is linked to the onset energy εc for vertical transitions between π and π* bands. The EFE-induced charge density affects the Fermi level, influencing the phonon frequency and lifetime. The results show that the G phonon frequency and width are symmetrically modulated by the EFE around the Dirac point. The damping of the G phonon is explained by Landau damping, where phonons decay into particle-hole pairs. The electron-phonon coupling strength is estimated from the damping rate, yielding a value consistent with density functional theory predictions. The study also highlights the role of non-uniform charge density in graphene, which affects the damping of G phonons. The findings demonstrate the EFE's ability to tune electron-phonon coupling in graphene, revealing insights into the interaction between optical phonons and Dirac fermions. The results provide a deeper understanding of the electronic structure and phonon dynamics in graphene, with implications for future studies of two-dimensional materials.This study investigates the electric field effect (EFE) on electron-phonon coupling in graphene using low-temperature Raman spectroscopy. The EFE, which modulates carrier density in graphene, significantly affects the optical phonons, particularly the G band (long wavelength phonon). The results show that the phonon frequency and line-width are sensitive to the EFE-modulated Fermi energy, revealing the particle-hole symmetry of massless Dirac fermions. The linear dependence of phonon frequency on Fermi energy is attributed to the electron-phonon coupling of Dirac fermions. The interaction between electrons and lattice vibrations is a fundamental aspect of condensed matter physics. In graphene, this interaction plays a key role in various phenomena, including photoemission spectra anomalies, high-energy electron transport in carbon nanotubes, and phonon structures in graphite and carbon nanotubes. Traditional methods for studying electron-phonon interactions involve chemical doping, but the EFE provides an effective alternative for tuning carrier density in low-dimensional systems. The study uses Raman spectroscopy to probe the EFE in single-layer graphene and the phonon dynamics associated with 2D Dirac fermions. The G band, a doubly degenerate optical phonon with E2g symmetry at ~1580 cm⁻¹, is found to be highly sensitive to the EFE. The D* band, a second-order band at ~2700 cm⁻¹, shows a smaller response to the EFE. The G band's sensitivity to small wavevector particle-hole pairs is linked to the onset energy εc for vertical transitions between π and π* bands. The EFE-induced charge density affects the Fermi level, influencing the phonon frequency and lifetime. The results show that the G phonon frequency and width are symmetrically modulated by the EFE around the Dirac point. The damping of the G phonon is explained by Landau damping, where phonons decay into particle-hole pairs. The electron-phonon coupling strength is estimated from the damping rate, yielding a value consistent with density functional theory predictions. The study also highlights the role of non-uniform charge density in graphene, which affects the damping of G phonons. The findings demonstrate the EFE's ability to tune electron-phonon coupling in graphene, revealing insights into the interaction between optical phonons and Dirac fermions. The results provide a deeper understanding of the electronic structure and phonon dynamics in graphene, with implications for future studies of two-dimensional materials.