This study demonstrates the electrical control of magnetism in bilayer CrI₃, a two-dimensional (2D) layered antiferromagnet. Using magneto-optical Kerr effect (MOKE) and reflectance magneto-circular dichroism (RMCD) microscopy, the researchers show that applying an electrostatic gate voltage can switch the magnetic state of bilayer CrI₃ between antiferromagnetic (AFM) and ferromagnetic (FM) configurations. At zero magnetic field, they observe two time-reversed AFM states, which exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. The results show that the critical field for the metamagnetic transition can be tuned by up to 30% via gate voltage, enabling electrically controlled phase transitions between AFM and FM states. Additionally, the net magnetization can be continuously tuned by gate voltage, with the two AFM states showing the same linear dependence of the MOKE signal on gate voltage but with opposite signs. These findings highlight the potential of 2D materials for exploring magnetoelectric phenomena and gate-tunable spintronics. The study also reveals that the metamagnetic transition is dominated by electrostatic doping, and that the critical field is strongly dependent on gate voltage. The results provide a new platform for investigating magnetoelectric effects in 2D materials.This study demonstrates the electrical control of magnetism in bilayer CrI₃, a two-dimensional (2D) layered antiferromagnet. Using magneto-optical Kerr effect (MOKE) and reflectance magneto-circular dichroism (RMCD) microscopy, the researchers show that applying an electrostatic gate voltage can switch the magnetic state of bilayer CrI₃ between antiferromagnetic (AFM) and ferromagnetic (FM) configurations. At zero magnetic field, they observe two time-reversed AFM states, which exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. The results show that the critical field for the metamagnetic transition can be tuned by up to 30% via gate voltage, enabling electrically controlled phase transitions between AFM and FM states. Additionally, the net magnetization can be continuously tuned by gate voltage, with the two AFM states showing the same linear dependence of the MOKE signal on gate voltage but with opposite signs. These findings highlight the potential of 2D materials for exploring magnetoelectric phenomena and gate-tunable spintronics. The study also reveals that the metamagnetic transition is dominated by electrostatic doping, and that the critical field is strongly dependent on gate voltage. The results provide a new platform for investigating magnetoelectric effects in 2D materials.