This study demonstrates the electrical switching and read-out of antiferromagnetic (AFM) CuMnAs thin films, which is a significant advancement in spintronics. Antiferromagnets, though theoretically interesting, have been challenging to control due to their zero net magnetization. However, the work shows that AFMs can be controlled electrically, similar to how ferromagnets are used in spintronics. The key insight is that AFMs and ferromagnets are equivalent for even functions of the magnetic moment, allowing for electrical control. The research team used CuMnAs, a high-temperature AFM material, to demonstrate room-temperature electrical switching between two stable configurations. This is achieved through relativistic transport phenomena, where the magnetic moments can be reoriented using electrical currents. The study shows that AFMs are robust against magnetic field perturbations and do not produce magnetic fields, making them ideal for spintronic applications. The team also demonstrated that AFMs can be used for spin-based memory, which is more robust against charge perturbations compared to charge-based devices. The study highlights the advantages of AFMs, including ultrafast magnetic dynamics and a broad range of materials with room-temperature AFM order. The research involved both theoretical and experimental approaches, including microscopic calculations based on the Kubo linear response formalism. The team prepared epitaxial CuMnAs films and performed measurements at room temperature, showing that the material can be switched electrically with currents comparable to those used in ferromagnetic spin-transfer-torque MRAMs. The study also shows that the AFM memory is insensitive to magnetic fields, which is a significant advantage. The results demonstrate that AFMs can be used for spintronic applications, offering a new direction in information technology. The work highlights the potential of AFMs in spintronics, with their unique properties making them suitable for future devices. The findings suggest that AFMs are now ready to join the rapidly developing fields of basic and applied spintronics.This study demonstrates the electrical switching and read-out of antiferromagnetic (AFM) CuMnAs thin films, which is a significant advancement in spintronics. Antiferromagnets, though theoretically interesting, have been challenging to control due to their zero net magnetization. However, the work shows that AFMs can be controlled electrically, similar to how ferromagnets are used in spintronics. The key insight is that AFMs and ferromagnets are equivalent for even functions of the magnetic moment, allowing for electrical control. The research team used CuMnAs, a high-temperature AFM material, to demonstrate room-temperature electrical switching between two stable configurations. This is achieved through relativistic transport phenomena, where the magnetic moments can be reoriented using electrical currents. The study shows that AFMs are robust against magnetic field perturbations and do not produce magnetic fields, making them ideal for spintronic applications. The team also demonstrated that AFMs can be used for spin-based memory, which is more robust against charge perturbations compared to charge-based devices. The study highlights the advantages of AFMs, including ultrafast magnetic dynamics and a broad range of materials with room-temperature AFM order. The research involved both theoretical and experimental approaches, including microscopic calculations based on the Kubo linear response formalism. The team prepared epitaxial CuMnAs films and performed measurements at room temperature, showing that the material can be switched electrically with currents comparable to those used in ferromagnetic spin-transfer-torque MRAMs. The study also shows that the AFM memory is insensitive to magnetic fields, which is a significant advantage. The results demonstrate that AFMs can be used for spintronic applications, offering a new direction in information technology. The work highlights the potential of AFMs in spintronics, with their unique properties making them suitable for future devices. The findings suggest that AFMs are now ready to join the rapidly developing fields of basic and applied spintronics.