A silicon-based electrically pumped hybrid AlGaInAs-silicon evanescent laser is reported, where the laser cavity is defined solely by the silicon waveguide and requires no critical alignment to the III-V active material during fabrication via wafer bonding. The laser operates continuously with a threshold of 65 mA, a maximum output power of 1.8 mW, a differential quantum efficiency of 12.7%, and a maximum operating temperature of 40°C. This approach allows for the fabrication of hundreds of lasers in one bonding step, making it suitable for high-volume, low-cost integration. The architecture can be extended to fabricate other active devices on silicon, such as optical amplifiers, modulators, and photo-detectors. The hybrid laser is composed of an offset multiple quantum well region bonded to silicon waveguides on a silicon-on-insulator wafer. The optical mode overlaps both the III-V material and the silicon waveguide, allowing for electrically pumped gain from the III-V region while being guided by the silicon waveguide. Due to the symmetry of the III-V region, no alignment step is needed prior to bonding, enabling self-alignment of the laser to passive silicon waveguide sections. The laser is fabricated using an AlGaInAs quantum well epitaxial structure bonded to a low-loss silicon strip waveguide. The silicon waveguide is formed on an undoped silicon-on-insulator substrate with a 2 μm thick buried oxide. The III-V epitaxial structure is transferred to the silicon wafer through low-temperature oxygen plasma-assisted wafer bonding. The laser is driven by applying a positive bias voltage to the top p contact, and its output is characterized using a spectrum analyzer or photodetector. The laser has a maximum operating temperature of 40°C, limited by poor heat extraction from the active region and high electrical series resistance. The maximum operating temperature can be improved by minimizing thermal impedance and electrical series resistance. The laser demonstrates multi-mode lasing with a lasing wavelength around 1577 nm at 70 mA and a free spectral range of 0.38 nm. The laser can be scaled to fabricate multiple lasers on a single silicon chip, with 26 of the 36 lasers on the chip lasing with similar performance. This approach offers a unique solution for light generation in silicon photonics, combining the benefits of two different material systems. The demonstration of a room-temperature, electrically pumped laser that can be integrated onto a silicon platform is a significant step toward the realization of cost-effective, highly integrated silicon photonic devices.A silicon-based electrically pumped hybrid AlGaInAs-silicon evanescent laser is reported, where the laser cavity is defined solely by the silicon waveguide and requires no critical alignment to the III-V active material during fabrication via wafer bonding. The laser operates continuously with a threshold of 65 mA, a maximum output power of 1.8 mW, a differential quantum efficiency of 12.7%, and a maximum operating temperature of 40°C. This approach allows for the fabrication of hundreds of lasers in one bonding step, making it suitable for high-volume, low-cost integration. The architecture can be extended to fabricate other active devices on silicon, such as optical amplifiers, modulators, and photo-detectors. The hybrid laser is composed of an offset multiple quantum well region bonded to silicon waveguides on a silicon-on-insulator wafer. The optical mode overlaps both the III-V material and the silicon waveguide, allowing for electrically pumped gain from the III-V region while being guided by the silicon waveguide. Due to the symmetry of the III-V region, no alignment step is needed prior to bonding, enabling self-alignment of the laser to passive silicon waveguide sections. The laser is fabricated using an AlGaInAs quantum well epitaxial structure bonded to a low-loss silicon strip waveguide. The silicon waveguide is formed on an undoped silicon-on-insulator substrate with a 2 μm thick buried oxide. The III-V epitaxial structure is transferred to the silicon wafer through low-temperature oxygen plasma-assisted wafer bonding. The laser is driven by applying a positive bias voltage to the top p contact, and its output is characterized using a spectrum analyzer or photodetector. The laser has a maximum operating temperature of 40°C, limited by poor heat extraction from the active region and high electrical series resistance. The maximum operating temperature can be improved by minimizing thermal impedance and electrical series resistance. The laser demonstrates multi-mode lasing with a lasing wavelength around 1577 nm at 70 mA and a free spectral range of 0.38 nm. The laser can be scaled to fabricate multiple lasers on a single silicon chip, with 26 of the 36 lasers on the chip lasing with similar performance. This approach offers a unique solution for light generation in silicon photonics, combining the benefits of two different material systems. The demonstration of a room-temperature, electrically pumped laser that can be integrated onto a silicon platform is a significant step toward the realization of cost-effective, highly integrated silicon photonic devices.