The paper presents an electrically pumped AlGaInAs-silicon evanescent laser, a significant advancement in the field of silicon photonics. This laser is designed to be integrated into photonic circuits on silicon, addressing the need for cost-effective and high-volume production. The laser cavity is defined solely by the silicon waveguide, eliminating the need for critical alignment during fabrication via wafer bonding. Key performance metrics include a threshold current of 65 mA, a maximum output power of 1.8 mW, and a differential quantum efficiency of 12.7%. The laser can operate at temperatures up to 40°C. The approach allows for the fabrication of multiple lasers in a single bonding step, making it suitable for large-scale integration. The architecture can be extended to fabricate other active devices such as optical amplifiers, modulators, and photodetectors by varying the silicon waveguide dimensions and the composition of the III-V layer. The paper also discusses the potential for improving the laser's performance, including reducing the thermal impedance and electrical series resistance, and enhancing injection efficiency. The demonstration of this hybrid laser is a crucial step towards realizing cost-effective, highly integrated silicon photonic devices.The paper presents an electrically pumped AlGaInAs-silicon evanescent laser, a significant advancement in the field of silicon photonics. This laser is designed to be integrated into photonic circuits on silicon, addressing the need for cost-effective and high-volume production. The laser cavity is defined solely by the silicon waveguide, eliminating the need for critical alignment during fabrication via wafer bonding. Key performance metrics include a threshold current of 65 mA, a maximum output power of 1.8 mW, and a differential quantum efficiency of 12.7%. The laser can operate at temperatures up to 40°C. The approach allows for the fabrication of multiple lasers in a single bonding step, making it suitable for large-scale integration. The architecture can be extended to fabricate other active devices such as optical amplifiers, modulators, and photodetectors by varying the silicon waveguide dimensions and the composition of the III-V layer. The paper also discusses the potential for improving the laser's performance, including reducing the thermal impedance and electrical series resistance, and enhancing injection efficiency. The demonstration of this hybrid laser is a crucial step towards realizing cost-effective, highly integrated silicon photonic devices.