This paper presents the development of electrically tunable excitonic light-emitting diodes (LEDs) based on monolayer WSe₂ p-n junctions. The authors demonstrate that by using a thin boron nitride support as a dielectric layer with multiple metal gates, they can achieve effective electron and hole injection, leading to bright electroluminescence with significantly reduced injection current and linewidth compared to monolayer MoS₂. The system allows for tuning the electroluminescence between regimes of impurity-bound, charged, and neutral excitons, making it suitable for applications such as spin- and valley-polarized LEDs, on-chip lasers, and two-dimensional electro-optic modulators. The high optical quality of WSe₂ and the strong Coulomb interaction in monolayer transition metal dichalcogenides (TMDs) enable efficient light emission and electrical control of exciton recombination. The device's performance is further enhanced by reducing contact resistance and improving crystal quality. The study also highlights the potential for creating controllably polarized emission through spin-valley locking in monolayer TMDs.This paper presents the development of electrically tunable excitonic light-emitting diodes (LEDs) based on monolayer WSe₂ p-n junctions. The authors demonstrate that by using a thin boron nitride support as a dielectric layer with multiple metal gates, they can achieve effective electron and hole injection, leading to bright electroluminescence with significantly reduced injection current and linewidth compared to monolayer MoS₂. The system allows for tuning the electroluminescence between regimes of impurity-bound, charged, and neutral excitons, making it suitable for applications such as spin- and valley-polarized LEDs, on-chip lasers, and two-dimensional electro-optic modulators. The high optical quality of WSe₂ and the strong Coulomb interaction in monolayer transition metal dichalcogenides (TMDs) enable efficient light emission and electrical control of exciton recombination. The device's performance is further enhanced by reducing contact resistance and improving crystal quality. The study also highlights the potential for creating controllably polarized emission through spin-valley locking in monolayer TMDs.