The paper presents a comprehensive study of the electronic properties of graphene in the presence of defects and electron-electron interactions. Graphene, a two-dimensional form of carbon, exhibits unique electronic behavior due to its honeycomb lattice structure and the presence of Dirac fermions. The study analyzes the effects of both localized (impurities, vacancies) and extended (edges, grain boundaries) defects on the electronic and transport properties of graphene. It shows that localized defects lead to a universal, disorder-independent electrical conductivity at low temperatures, while extended defects introduce localized states near the Fermi level, leading to phenomena such as self-doping. The paper also discusses the role of electron-electron interactions in controlling self-doping and the occurrence of the integer and fractional quantum Hall effect in graphene. The magnetic susceptibility of graphene is found to be temperature-dependent and increases with the amount of defects. The study also addresses the possibility of magnetism in graphene due to short-range electron-electron interactions and disorder. The results are supported by both theoretical calculations and experimental data, and the paper provides a detailed analysis of the electronic density of states, spectral function, frequency-dependent conductivity, and magneto-transport properties of graphene. The study concludes that graphene is not particularly susceptible to ferromagnetism, and that antiferromagnetic correlations are more prominent in the graphene lattice. The paper also discusses the role of disorder in the magnetic response of graphene and the interplay between short-range Coulomb interactions and lattice disorder. The results have implications for the understanding of the electronic properties of other carbon-based materials such as graphite, fullerenes, and carbon nanotubes.The paper presents a comprehensive study of the electronic properties of graphene in the presence of defects and electron-electron interactions. Graphene, a two-dimensional form of carbon, exhibits unique electronic behavior due to its honeycomb lattice structure and the presence of Dirac fermions. The study analyzes the effects of both localized (impurities, vacancies) and extended (edges, grain boundaries) defects on the electronic and transport properties of graphene. It shows that localized defects lead to a universal, disorder-independent electrical conductivity at low temperatures, while extended defects introduce localized states near the Fermi level, leading to phenomena such as self-doping. The paper also discusses the role of electron-electron interactions in controlling self-doping and the occurrence of the integer and fractional quantum Hall effect in graphene. The magnetic susceptibility of graphene is found to be temperature-dependent and increases with the amount of defects. The study also addresses the possibility of magnetism in graphene due to short-range electron-electron interactions and disorder. The results are supported by both theoretical calculations and experimental data, and the paper provides a detailed analysis of the electronic density of states, spectral function, frequency-dependent conductivity, and magneto-transport properties of graphene. The study concludes that graphene is not particularly susceptible to ferromagnetism, and that antiferromagnetic correlations are more prominent in the graphene lattice. The paper also discusses the role of disorder in the magnetic response of graphene and the interplay between short-range Coulomb interactions and lattice disorder. The results have implications for the understanding of the electronic properties of other carbon-based materials such as graphite, fullerenes, and carbon nanotubes.