Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene

Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene

11 Jan 2019 | Aaron L. Sharpe, Eli J. Fox, Arthur W. Barnard, Joe Finney, Kenji Watanabe, Takashi Taniguchi, M. A. Kastner, David Goldhaber-Gordon
The study investigates the emergence of ferromagnetism in twisted bilayer graphene (TBG) near three-quarters filling of the conduction miniband. The researchers observed a giant anomalous Hall (AH) effect, with resistances up to 10.4 kΩ, and signs of chiral edge states in a narrow density range around 3/4 filling. Surprisingly, the magnetization of the sample can be reversed by applying a small DC current. Despite the absence of transition metals or heavy elements, the system exhibits properties similar to a ferromagnetic topological insulator, suggesting it may be an incipient Chern insulator. The findings provide evidence for the existence of a topologically nontrivial gap in TBG, which could lead to new platforms for quantum anomalous Hall physics and applications in metrology, quantum computing, and low-power electronics.The study investigates the emergence of ferromagnetism in twisted bilayer graphene (TBG) near three-quarters filling of the conduction miniband. The researchers observed a giant anomalous Hall (AH) effect, with resistances up to 10.4 kΩ, and signs of chiral edge states in a narrow density range around 3/4 filling. Surprisingly, the magnetization of the sample can be reversed by applying a small DC current. Despite the absence of transition metals or heavy elements, the system exhibits properties similar to a ferromagnetic topological insulator, suggesting it may be an incipient Chern insulator. The findings provide evidence for the existence of a topologically nontrivial gap in TBG, which could lead to new platforms for quantum anomalous Hall physics and applications in metrology, quantum computing, and low-power electronics.
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Understanding Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene