This study reports the first demonstration of an entangled photon source in an integrated silicon carbide (SiC) platform. The entangled photon pairs are generated via spontaneous four-wave mixing (SFWM) in a compact microring resonator within a 4H-SiC-on-insulator platform. The photons are efficiently generated at the telecom C-band wavelength (1550 nm) with a maximum coincidence-to-accidental ratio (CAR) exceeding 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9±1)×10³ pairs/s. Energy-time entanglement is created and verified for the signal-idler photon pairs, with two-photon interference fringes exhibiting a visibility larger than 99%. Heralded single-photon properties are also measured, with the heralded g²(0) on the order of 10⁻³, demonstrating strong antibunching. These results show the SiC platform as a promising fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications. Integrated quantum photonic circuits offer a promising pathway for the scalable implementation of quantum technologies. Various integrated photonic platforms, such as silicon-on-insulator and lithium niobate-on-insulator, have been investigated. Major components of quantum information processing, including single and entangled photon sources, squeezed light, efficient photon detectors, low-loss waveguides and filters, and quantum memories, have been demonstrated. These advances have greatly benefited applications such as quantum teleportation and photonic quantum computing. Silicon carbide (SiC) has emerged as a promising photonic and quantum material due to its unique properties. It is transparent from visible to mid-infrared, has strong second- and third-order optical nonlinearities, and has high thermal conductivity and robustness. Various color centers with promising quantum properties have been discovered in several polytypes of SiC, including 3C, 4H, and 6H. These features, combined with the recent demonstration of low-loss SiC-on-insulator (SiCOI) integrated photonics platform, suggest potential disruption of quantum information processing through scalable integration of SiC-based spin defects with a wealth of quantum electrical and photonic technologies on the same chip. The study demonstrates the first entangled photon source in an integrated SiC platform. Photon pairs are efficiently generated at the telecom C-band wavelength through SFWM in a compact microring resonator in the 4H-SiC-on-insulator platform. With milliwatt-level continuous-wave on-chip pump powers at room temperature, pair generation rates of over 1 million counts per second are observed. The maximum CAR exceeds 600 at a pump power of 0.17 mW, corresponding to an on-chip pair rate of (9±1)×10³ pairs/s. Energy-time entanglement is created for the signalThis study reports the first demonstration of an entangled photon source in an integrated silicon carbide (SiC) platform. The entangled photon pairs are generated via spontaneous four-wave mixing (SFWM) in a compact microring resonator within a 4H-SiC-on-insulator platform. The photons are efficiently generated at the telecom C-band wavelength (1550 nm) with a maximum coincidence-to-accidental ratio (CAR) exceeding 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9±1)×10³ pairs/s. Energy-time entanglement is created and verified for the signal-idler photon pairs, with two-photon interference fringes exhibiting a visibility larger than 99%. Heralded single-photon properties are also measured, with the heralded g²(0) on the order of 10⁻³, demonstrating strong antibunching. These results show the SiC platform as a promising fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications. Integrated quantum photonic circuits offer a promising pathway for the scalable implementation of quantum technologies. Various integrated photonic platforms, such as silicon-on-insulator and lithium niobate-on-insulator, have been investigated. Major components of quantum information processing, including single and entangled photon sources, squeezed light, efficient photon detectors, low-loss waveguides and filters, and quantum memories, have been demonstrated. These advances have greatly benefited applications such as quantum teleportation and photonic quantum computing. Silicon carbide (SiC) has emerged as a promising photonic and quantum material due to its unique properties. It is transparent from visible to mid-infrared, has strong second- and third-order optical nonlinearities, and has high thermal conductivity and robustness. Various color centers with promising quantum properties have been discovered in several polytypes of SiC, including 3C, 4H, and 6H. These features, combined with the recent demonstration of low-loss SiC-on-insulator (SiCOI) integrated photonics platform, suggest potential disruption of quantum information processing through scalable integration of SiC-based spin defects with a wealth of quantum electrical and photonic technologies on the same chip. The study demonstrates the first entangled photon source in an integrated SiC platform. Photon pairs are efficiently generated at the telecom C-band wavelength through SFWM in a compact microring resonator in the 4H-SiC-on-insulator platform. With milliwatt-level continuous-wave on-chip pump powers at room temperature, pair generation rates of over 1 million counts per second are observed. The maximum CAR exceeds 600 at a pump power of 0.17 mW, corresponding to an on-chip pair rate of (9±1)×10³ pairs/s. Energy-time entanglement is created for the signal