A silicene sheet, a graphene-like structure, has been experimentally demonstrated to be epitaxially grown on a close-packed silver surface (Ag(111)) using atomic resolution scanning tunneling microscopy (STM). The silicene sheet was synthesized by direct condensation of a silicon atomic flux onto a single-crystal Ag(111) substrate under ultra-high vacuum conditions. The resulting structure exhibits a honeycomb lattice with two silicon sub-lattices at different heights (0.02 nm), suggesting sp²-sp³ hybridization. The silicene sheet shows a highly ordered structure, with a Si-Si nearest-neighbor distance of 0.19-0.2 nm, which is 17% shorter than that of bulk silicon, indicating the Ag substrate may act as a catalyst. Low energy electron diffraction (LEED) confirms the long-range order of the silicene sheet, with a (2√3×2√3)R30° superstructure. The STM images reveal that the silicene film covers surface steps similarly to graphene on metals. The study also shows that the silicene sheet has a band structure with Dirac cones, similar to graphene. The experimental conditions required for the synthesis are strict, with the substrate temperature maintained between 220 and 250°C and a silicon deposition rate below 0.1 monolayer per minute. The silicene sheet was successfully produced in three experiments. The results suggest that silicene could be a promising material for nanotechnology applications, compatible with existing semiconductor devices. Further studies using ARPES are planned to confirm the band dispersion and Dirac cones in silicene.A silicene sheet, a graphene-like structure, has been experimentally demonstrated to be epitaxially grown on a close-packed silver surface (Ag(111)) using atomic resolution scanning tunneling microscopy (STM). The silicene sheet was synthesized by direct condensation of a silicon atomic flux onto a single-crystal Ag(111) substrate under ultra-high vacuum conditions. The resulting structure exhibits a honeycomb lattice with two silicon sub-lattices at different heights (0.02 nm), suggesting sp²-sp³ hybridization. The silicene sheet shows a highly ordered structure, with a Si-Si nearest-neighbor distance of 0.19-0.2 nm, which is 17% shorter than that of bulk silicon, indicating the Ag substrate may act as a catalyst. Low energy electron diffraction (LEED) confirms the long-range order of the silicene sheet, with a (2√3×2√3)R30° superstructure. The STM images reveal that the silicene film covers surface steps similarly to graphene on metals. The study also shows that the silicene sheet has a band structure with Dirac cones, similar to graphene. The experimental conditions required for the synthesis are strict, with the substrate temperature maintained between 220 and 250°C and a silicon deposition rate below 0.1 monolayer per minute. The silicene sheet was successfully produced in three experiments. The results suggest that silicene could be a promising material for nanotechnology applications, compatible with existing semiconductor devices. Further studies using ARPES are planned to confirm the band dispersion and Dirac cones in silicene.