This study investigates the electronic structure evolution in atomically thin sheets of WS₂ and WSe₂, revealing their transition from indirect to direct bandgap when thinned to a single monolayer. Similar to MoS₂, these materials exhibit a significant increase in photoluminescence (PL) efficiency due to exciton recombination at the direct band edge. The PL quantum yield is strongly enhanced in monolayer WS₂ and WSe₂, indicating their direct bandgap nature. In contrast, few-layer WS₂ and WSe₂ show strong indirect gap emission and distinct direct gap hot electron emission, suggesting high-quality synthetic crystals. The optical properties of these materials are strongly influenced by Se p-orbitals and interlayer coupling in WSe₂. Differential reflectance and PL spectra of mono- to few-layer WS₂ and WSe₂ show blueshift in excitonic absorption and emission bands with decreasing layer thickness. The energy difference between excitonic absorption peaks (A and B) is approximately 400 meV, consistent with theoretical calculations. For WSe₂, additional peaks (A' and B') are observed, attributed to inter- and intra-layer perturbations of the d electron band by Se p-orbitals. These peaks show strong thickness-dependent shifts, indicating strong interlayer coupling. PL spectra show significant dependence on sample thickness, with a sudden increase in emission intensity when thinned to a monolayer. Monolayer WS₂ and WSe₂ exhibit distinct emission at the energy corresponding to excitonic absorption, while multilayer samples show reduced emission intensity. The PL quantum yield (QY) is significantly higher for synthetic WS₂ and WSe₂ compared to natural MoS₂. The narrow emission line and small Stokes shift indicate high-quality WSe₂ samples. The study demonstrates that WS₂ and WSe₂, like MoS₂, exhibit a direct to indirect bandgap transition when thinned to a single monolayer. The distinct and intense PL emission from monolayer WS₂ and WSe₂ is 100 to 1000 times stronger than that in indirect-gap bulk materials. The high quality of the CVT-grown samples is evidenced by the distinct indirect gap emission, small Stokes shift, and narrow emission linewidth. Strong interlayer coupling in WSe₂ is evidenced by the presence of A' and B' absorption and emission peaks and their thickness-dependent shifts. The results highlight the unique optical properties of 2D semiconducting crystals in the Group 6 TMD family. These materials show structural similarities that allow the fabrication of coherent artificial crystals with electronically dissimilar layers. Monolayer WS₂ and WSe₂ with direct bandgaps in the visible and near-infrared frequency ranges are novel building blocks for realizing unique heterostructures with tailored optoelectronic, electrocatalytic, and photocatalytic functionalities.This study investigates the electronic structure evolution in atomically thin sheets of WS₂ and WSe₂, revealing their transition from indirect to direct bandgap when thinned to a single monolayer. Similar to MoS₂, these materials exhibit a significant increase in photoluminescence (PL) efficiency due to exciton recombination at the direct band edge. The PL quantum yield is strongly enhanced in monolayer WS₂ and WSe₂, indicating their direct bandgap nature. In contrast, few-layer WS₂ and WSe₂ show strong indirect gap emission and distinct direct gap hot electron emission, suggesting high-quality synthetic crystals. The optical properties of these materials are strongly influenced by Se p-orbitals and interlayer coupling in WSe₂. Differential reflectance and PL spectra of mono- to few-layer WS₂ and WSe₂ show blueshift in excitonic absorption and emission bands with decreasing layer thickness. The energy difference between excitonic absorption peaks (A and B) is approximately 400 meV, consistent with theoretical calculations. For WSe₂, additional peaks (A' and B') are observed, attributed to inter- and intra-layer perturbations of the d electron band by Se p-orbitals. These peaks show strong thickness-dependent shifts, indicating strong interlayer coupling. PL spectra show significant dependence on sample thickness, with a sudden increase in emission intensity when thinned to a monolayer. Monolayer WS₂ and WSe₂ exhibit distinct emission at the energy corresponding to excitonic absorption, while multilayer samples show reduced emission intensity. The PL quantum yield (QY) is significantly higher for synthetic WS₂ and WSe₂ compared to natural MoS₂. The narrow emission line and small Stokes shift indicate high-quality WSe₂ samples. The study demonstrates that WS₂ and WSe₂, like MoS₂, exhibit a direct to indirect bandgap transition when thinned to a single monolayer. The distinct and intense PL emission from monolayer WS₂ and WSe₂ is 100 to 1000 times stronger than that in indirect-gap bulk materials. The high quality of the CVT-grown samples is evidenced by the distinct indirect gap emission, small Stokes shift, and narrow emission linewidth. Strong interlayer coupling in WSe₂ is evidenced by the presence of A' and B' absorption and emission peaks and their thickness-dependent shifts. The results highlight the unique optical properties of 2D semiconducting crystals in the Group 6 TMD family. These materials show structural similarities that allow the fabrication of coherent artificial crystals with electronically dissimilar layers. Monolayer WS₂ and WSe₂ with direct bandgaps in the visible and near-infrared frequency ranges are novel building blocks for realizing unique heterostructures with tailored optoelectronic, electrocatalytic, and photocatalytic functionalities.