This study demonstrates the continuous tuning of the electronic structure of atomically thin MoS₂ on flexible substrates through uniaxial tensile strain. Using absorption and photoluminescence spectroscopy, the researchers observed a redshift of approximately 70 meV per percent strain for direct gap transitions and 1.6 times larger for indirect gap transitions. These results align with first-principles calculations, showing the potential of two-dimensional crystals for flexible electronics and optoelectronics. The electronic and optical properties of 2D materials are highly sensitive to external perturbations due to their atomic thickness. MoS₂, a semiconducting transition metal dichalcogenide with lower symmetry, offers excellent opportunities for band structure tuning via strain engineering. Monolayer MoS₂ has distinctive electronic and optical properties, including a crossover from indirect to direct gap transitions, strong excitonic effects, and the possibility of controlling valley and spin occupations. The study applied uniaxial tensile strain using a cantilever device and measured the strain dependence of the electronic structure through optical absorption and photoluminescence spectroscopy. The results showed that both mono- and bilayer MoS₂ samples exhibited redshifts in exciton energies with strain, with the indirect gap transitions showing a larger redshift rate. The strain effects were found to be independent of crystallographic orientation, consistent with the isotropic in-plane elasticity of MoS₂. The study also investigated the strain effects on bilayer MoS₂, finding similar redshift rates for direct and indirect gap transitions. The results indicate that strain can be used to tune the electronic structure of 2D materials, opening new possibilities for applications in flexible electronics and optoelectronics. The findings highlight the importance of strain engineering in manipulating the properties of 2D materials and suggest that similar approaches could be applied to other semiconducting transition metal dichalcogenides.This study demonstrates the continuous tuning of the electronic structure of atomically thin MoS₂ on flexible substrates through uniaxial tensile strain. Using absorption and photoluminescence spectroscopy, the researchers observed a redshift of approximately 70 meV per percent strain for direct gap transitions and 1.6 times larger for indirect gap transitions. These results align with first-principles calculations, showing the potential of two-dimensional crystals for flexible electronics and optoelectronics. The electronic and optical properties of 2D materials are highly sensitive to external perturbations due to their atomic thickness. MoS₂, a semiconducting transition metal dichalcogenide with lower symmetry, offers excellent opportunities for band structure tuning via strain engineering. Monolayer MoS₂ has distinctive electronic and optical properties, including a crossover from indirect to direct gap transitions, strong excitonic effects, and the possibility of controlling valley and spin occupations. The study applied uniaxial tensile strain using a cantilever device and measured the strain dependence of the electronic structure through optical absorption and photoluminescence spectroscopy. The results showed that both mono- and bilayer MoS₂ samples exhibited redshifts in exciton energies with strain, with the indirect gap transitions showing a larger redshift rate. The strain effects were found to be independent of crystallographic orientation, consistent with the isotropic in-plane elasticity of MoS₂. The study also investigated the strain effects on bilayer MoS₂, finding similar redshift rates for direct and indirect gap transitions. The results indicate that strain can be used to tune the electronic structure of 2D materials, opening new possibilities for applications in flexible electronics and optoelectronics. The findings highlight the importance of strain engineering in manipulating the properties of 2D materials and suggest that similar approaches could be applied to other semiconducting transition metal dichalcogenides.