This study reports the first successful synthesis of individual (S-W-S) monolayers of WS₂ with extraordinary room-temperature photoluminescence (PL). The monolayers, synthesized via sulfurization of ultrathin WO₃ films, exhibit strong PL signals from their edges, up to 25 times stronger than the center. The edges of these monolayers have sulfur-rich zigzag structures, which host metallic edge states that enhance the optical response. First-principles calculations suggest that the sulfur-rich zigzag edges introduce localized metallic states, contributing to the strong PL enhancement. The PL signal is attributed to the transition from an indirect band gap (in bulk WS₂) to a direct band gap (in monolayer WS₂). The PL intensity is significantly enhanced near the edges and corners of the triangular platelets, a phenomenon not previously reported in 2D metal dichalcogenides. The study also demonstrates that the edge chemistry of WS₂ monolayers is crucial for the localized PL enhancement, with dangling bonds or different edge passivation affecting the magnetic properties. The results suggest that edges and defects in monolayer materials can be engineered to tailor their optoelectronic properties. The synthesis method is scalable and can be applied to other metal dichalcogenides, opening up possibilities for real 2D device fabrication. The study provides insights into the optical and electronic properties of WS₂ monolayers, highlighting the potential of 2D nanoscale light sources for optoelectronic applications.This study reports the first successful synthesis of individual (S-W-S) monolayers of WS₂ with extraordinary room-temperature photoluminescence (PL). The monolayers, synthesized via sulfurization of ultrathin WO₃ films, exhibit strong PL signals from their edges, up to 25 times stronger than the center. The edges of these monolayers have sulfur-rich zigzag structures, which host metallic edge states that enhance the optical response. First-principles calculations suggest that the sulfur-rich zigzag edges introduce localized metallic states, contributing to the strong PL enhancement. The PL signal is attributed to the transition from an indirect band gap (in bulk WS₂) to a direct band gap (in monolayer WS₂). The PL intensity is significantly enhanced near the edges and corners of the triangular platelets, a phenomenon not previously reported in 2D metal dichalcogenides. The study also demonstrates that the edge chemistry of WS₂ monolayers is crucial for the localized PL enhancement, with dangling bonds or different edge passivation affecting the magnetic properties. The results suggest that edges and defects in monolayer materials can be engineered to tailor their optoelectronic properties. The synthesis method is scalable and can be applied to other metal dichalcogenides, opening up possibilities for real 2D device fabrication. The study provides insights into the optical and electronic properties of WS₂ monolayers, highlighting the potential of 2D nanoscale light sources for optoelectronic applications.