This review summarizes the fabrication and photonic applications of silicon-integrated lithium niobate (LN) and barium titanate (BTO) ferroelectric thin films. Silicon, known for its use in electronic circuits, also offers advantages in integrated optics. While silicon has limitations in fabricating active devices, these can be overcome through heterogeneous integration with other materials. LN and BTO, with their excellent electrical and nonlinear optical properties, are ideal for integrated silicon photonics. Over the past few decades, the LN platform has made significant progress, overcoming challenges such as manufacturing difficulties, high waveguide losses, and low modulation bandwidth. LN-based devices have found widespread applications in various fields. With the advent of high-quality, large-size LN on insulator wafers, LN photonics has become a growing research area. BTO, with its strong electro-optic response, shows promise for the next generation of integrated photonics. Recent studies have highlighted the remarkable performance of BTO-based modulators, which offer smaller device sizes compared to LN by achieving lower half-wave voltages. This review presents various fabrication methods for integrating LN and BTO thin films on silicon, focusing on recent advancements. We discuss their electro-optic responses and provide an overview of the diverse applications enabled by these platforms. Finally, we summarize the current state of integrated LN and BTO photonics research and offer insights into future directions. The review highlights the potential of LN and BTO in various applications, including nanophotonics, quantum information processing, and all-optical networks. It also discusses the fabrication processes, waveguide devices, and modulators based on LN and BTO, emphasizing their advantages in terms of performance and integration. The review concludes with the potential of these materials in future photonic applications.This review summarizes the fabrication and photonic applications of silicon-integrated lithium niobate (LN) and barium titanate (BTO) ferroelectric thin films. Silicon, known for its use in electronic circuits, also offers advantages in integrated optics. While silicon has limitations in fabricating active devices, these can be overcome through heterogeneous integration with other materials. LN and BTO, with their excellent electrical and nonlinear optical properties, are ideal for integrated silicon photonics. Over the past few decades, the LN platform has made significant progress, overcoming challenges such as manufacturing difficulties, high waveguide losses, and low modulation bandwidth. LN-based devices have found widespread applications in various fields. With the advent of high-quality, large-size LN on insulator wafers, LN photonics has become a growing research area. BTO, with its strong electro-optic response, shows promise for the next generation of integrated photonics. Recent studies have highlighted the remarkable performance of BTO-based modulators, which offer smaller device sizes compared to LN by achieving lower half-wave voltages. This review presents various fabrication methods for integrating LN and BTO thin films on silicon, focusing on recent advancements. We discuss their electro-optic responses and provide an overview of the diverse applications enabled by these platforms. Finally, we summarize the current state of integrated LN and BTO photonics research and offer insights into future directions. The review highlights the potential of LN and BTO in various applications, including nanophotonics, quantum information processing, and all-optical networks. It also discusses the fabrication processes, waveguide devices, and modulators based on LN and BTO, emphasizing their advantages in terms of performance and integration. The review concludes with the potential of these materials in future photonic applications.