Few-layer black phosphorus (b-P) field-effect transistors (FETs) exhibit fast and broadband photoresponse, making them promising for photodetection across the visible and near-infrared (NIR) spectrum. The study investigates the optoelectronic properties of b-P FETs, focusing on their photoresponse under different excitation wavelengths, power, and frequencies. The FETs, fabricated using mechanical exfoliation and standard e-beam lithography, show ambipolar behavior with high mobility values (up to 100 cm²/Vs for holes and 0.5 cm²/Vs for electrons) and a current ON/OFF ratio exceeding 10³. Upon illumination, the b-P FETs respond to excitation wavelengths from the visible up to 940 nm, with a rise time of about 1 ms and a fall time of 4 ms, demonstrating fast and broadband detection. The responsivity reaches 4.8 mA/W, and the performance could be further enhanced by engineering a detector based on a PN junction. The b-P FETs show a broadband response to light excitation from the visible to the NIR region, with a cut-off wavelength of approximately 997 nm, indicating their potential for broadband photodetection. The study also highlights the advantages of b-P over other 2D materials like MoS₂ and WS₂, which have smaller detection ranges and slower response times. The results suggest that b-P is a promising active material for high-speed NIR detectors, with further device engineering offering opportunities for improvement. The study provides a comprehensive characterization of b-P FETs, including their electrical and optoelectronic properties, and demonstrates their potential for photodetection applications.Few-layer black phosphorus (b-P) field-effect transistors (FETs) exhibit fast and broadband photoresponse, making them promising for photodetection across the visible and near-infrared (NIR) spectrum. The study investigates the optoelectronic properties of b-P FETs, focusing on their photoresponse under different excitation wavelengths, power, and frequencies. The FETs, fabricated using mechanical exfoliation and standard e-beam lithography, show ambipolar behavior with high mobility values (up to 100 cm²/Vs for holes and 0.5 cm²/Vs for electrons) and a current ON/OFF ratio exceeding 10³. Upon illumination, the b-P FETs respond to excitation wavelengths from the visible up to 940 nm, with a rise time of about 1 ms and a fall time of 4 ms, demonstrating fast and broadband detection. The responsivity reaches 4.8 mA/W, and the performance could be further enhanced by engineering a detector based on a PN junction. The b-P FETs show a broadband response to light excitation from the visible to the NIR region, with a cut-off wavelength of approximately 997 nm, indicating their potential for broadband photodetection. The study also highlights the advantages of b-P over other 2D materials like MoS₂ and WS₂, which have smaller detection ranges and slower response times. The results suggest that b-P is a promising active material for high-speed NIR detectors, with further device engineering offering opportunities for improvement. The study provides a comprehensive characterization of b-P FETs, including their electrical and optoelectronic properties, and demonstrates their potential for photodetection applications.