This study demonstrates field-free spin-orbit torque (SOT) switching in a CoFeB/Ti/CoFeB ferromagnetic trilayer at sub-nanosecond timescales, addressing the limitations of conventional spin-transfer torque (STT) in magnetic random access memory (MRAM) applications. The trilayer structure allows for both in-plane and out-of-plane spin current polarizations, reducing incubation time and enabling field-free switching with low current. The switching probability is investigated using short pulses, showing a minimum pulse width of 0.3 ns for a current density of 78.15 MA cm^-2. Micromagnetic simulations confirm the role of out-of-plane spin current in reducing switching current density. The incubation time of the switching process is estimated to be 0.0144 - 0.226 ns, significantly smaller than the STT incubation time. This work presents a promising solution for energy-efficient, scalable MRAM applications with ultrafast switching capabilities.This study demonstrates field-free spin-orbit torque (SOT) switching in a CoFeB/Ti/CoFeB ferromagnetic trilayer at sub-nanosecond timescales, addressing the limitations of conventional spin-transfer torque (STT) in magnetic random access memory (MRAM) applications. The trilayer structure allows for both in-plane and out-of-plane spin current polarizations, reducing incubation time and enabling field-free switching with low current. The switching probability is investigated using short pulses, showing a minimum pulse width of 0.3 ns for a current density of 78.15 MA cm^-2. Micromagnetic simulations confirm the role of out-of-plane spin current in reducing switching current density. The incubation time of the switching process is estimated to be 0.0144 - 0.226 ns, significantly smaller than the STT incubation time. This work presents a promising solution for energy-efficient, scalable MRAM applications with ultrafast switching capabilities.