JUNE 07 2024 | Gottlieb S. Oehrlein, Stephan M. Brandstadter, Robert L. Bruce, Jane P. Chang, Jessica C. DeMott, Vincent M. Donnelly, Rémi Dussart, Andreas Fischer, Richard A. Gottscho, Satoshi Hamaguchi, Masanobu Honda, Masaru Hori, Kenji Ishikawa, Steven G. Jaloviar, Keren J. Kanarik, Kazuhiro Karahashi, Akiteru Ko, Hiten Kothari, Nobuyuki Kuboi, Mark J. Kushner, Thorsten Lill, Pingshan Luan, Ali Mesbah, Eric Miller, Shoubhanik Nath, Yoshinobu Ohya, Mitsuhiro Omura, Chanhoon Park, John Poulose, Shahid Rauf, Makoto Sekine, Taylor G. Smith, Nathan Stafford, Theo Standaert, Peter L. G. Ventzek
The article "Future of Plasma Etching for Microelectronics: Challenges and Opportunities" by Gottlieb S. Oehrfine et al. discusses the critical role of plasma etching in the microelectronics industry and the challenges it faces in meeting the demands of modern technology. The authors highlight the dynamic evolution of plasma etching to accommodate the transition to three-dimensional (3D) device architectures, atomic-scale precision, new materials, and post-CMOS approaches. They emphasize the importance of addressing societal challenges such as sustainability and environmental impact. The article outlines several key areas of focus, including:
1. **Industrial Perspectives**: The need for plasma etching in future device and circuit evolution, with a focus on the impact of EUV lithography and the challenges it poses for pattern transfer.
2. **Co-Optimization with Process Integration Flow**: The importance of co-optimizing plasma etching with other processes in the manufacturing flow to ensure yield and reliability.
3. **High-Aspect-Ratio Processing**: The challenges and opportunities in etching complex 3D structures, including high-aspect-ratio (HAR) processing of insulators and conductors.
4. **Sustainability and Environmental Issues**: The need to address green chemistry and emissions in plasma etching chemistries.
5. **Post-CMOS Evolution**: The potential for new materials and structures, such as topological semimetals, and the challenges in etching these materials.
6. **Atomic Layer Etching (ALE)**: The use of ALE for self-aligned contacts and its benefits in minimizing spacer loss.
7. **Cryogenic Etching**: A newer strategy to maximize radicals transmitted to the etch front, reducing etching time and improving aspect ratio.
8. **Machine Learning and Computational Modeling**: The integration of machine learning and computational approaches to advance plasma etching technology.
The article concludes by emphasizing the need for continued innovation and collaboration between industry and academia to overcome the challenges and capitalize on the opportunities in plasma etching for future microelectronics manufacturing.The article "Future of Plasma Etching for Microelectronics: Challenges and Opportunities" by Gottlieb S. Oehrfine et al. discusses the critical role of plasma etching in the microelectronics industry and the challenges it faces in meeting the demands of modern technology. The authors highlight the dynamic evolution of plasma etching to accommodate the transition to three-dimensional (3D) device architectures, atomic-scale precision, new materials, and post-CMOS approaches. They emphasize the importance of addressing societal challenges such as sustainability and environmental impact. The article outlines several key areas of focus, including:
1. **Industrial Perspectives**: The need for plasma etching in future device and circuit evolution, with a focus on the impact of EUV lithography and the challenges it poses for pattern transfer.
2. **Co-Optimization with Process Integration Flow**: The importance of co-optimizing plasma etching with other processes in the manufacturing flow to ensure yield and reliability.
3. **High-Aspect-Ratio Processing**: The challenges and opportunities in etching complex 3D structures, including high-aspect-ratio (HAR) processing of insulators and conductors.
4. **Sustainability and Environmental Issues**: The need to address green chemistry and emissions in plasma etching chemistries.
5. **Post-CMOS Evolution**: The potential for new materials and structures, such as topological semimetals, and the challenges in etching these materials.
6. **Atomic Layer Etching (ALE)**: The use of ALE for self-aligned contacts and its benefits in minimizing spacer loss.
7. **Cryogenic Etching**: A newer strategy to maximize radicals transmitted to the etch front, reducing etching time and improving aspect ratio.
8. **Machine Learning and Computational Modeling**: The integration of machine learning and computational approaches to advance plasma etching technology.
The article concludes by emphasizing the need for continued innovation and collaboration between industry and academia to overcome the challenges and capitalize on the opportunities in plasma etching for future microelectronics manufacturing.