The study investigates the gate-tunable room-temperature ferromagnetism in two-dimensional (2D) Fe3GeTe2 (FGT). The researchers developed a new fabrication technique to isolate monolayers of FGT, which exhibit itinerant ferromagnetism down to the monolayer thickness. The ferromagnetic transition temperature, \( T_c \), is suppressed in pristine FGT thin flakes but can be significantly increased to room temperature using an ionic gate, raising \( T_c \) to over 300 K. This effect is attributed to the interplay between spin and charge degrees of freedom, enabling large anomalous Hall effects. The findings suggest that FGT could be a promising material for voltage-controlled magnetoelectronics based on atomically thin van der Waals crystals. The study also discusses the critical behavior at the paramagnetic-to-ferromagnetic phase transition, showing that the critical exponent and layer number depend on the universality class of the transition.The study investigates the gate-tunable room-temperature ferromagnetism in two-dimensional (2D) Fe3GeTe2 (FGT). The researchers developed a new fabrication technique to isolate monolayers of FGT, which exhibit itinerant ferromagnetism down to the monolayer thickness. The ferromagnetic transition temperature, \( T_c \), is suppressed in pristine FGT thin flakes but can be significantly increased to room temperature using an ionic gate, raising \( T_c \) to over 300 K. This effect is attributed to the interplay between spin and charge degrees of freedom, enabling large anomalous Hall effects. The findings suggest that FGT could be a promising material for voltage-controlled magnetoelectronics based on atomically thin van der Waals crystals. The study also discusses the critical behavior at the paramagnetic-to-ferromagnetic phase transition, showing that the critical exponent and layer number depend on the universality class of the transition.