Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation

Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation

2024 | Zhen Wang, Chunhua Tan, Meng Peng, Yiye Yu, Fang Zhong, Peng Wang, Ting He, Yang Wang, Zhenhan Zhang, Runzhang Xie, Fang Wang, Shuijin He, Peng Zhou and Weida Hu
This study reports a giant infrared bulk photovoltaic effect (BPVE) in tellurine (Te) for broad-spectrum neuromodulation. Te, a narrow bandgap semiconductor, exhibits a wide range of photovoltaic wavelengths from ultraviolet to mid-infrared, with a photocurrent density of 70.4 A cm⁻² under infrared light, surpassing previous semiconductors and semimetals. The BPVE in Te is attributed to its noncentrosymmetric structure, which enables efficient light-to-electricity conversion. Te nanoflakes, when attached to cortical neurons, elicit action potentials under broad-spectrum light irradiation, demonstrating the potential of Te for neuromodulation. The study also reveals that the BPVE in Te spans a wide wavelength range, from ultraviolet (390 nm) to mid-infrared (3.8 μm), and that the infrared BPVE in Te is highly efficient, enabling broad-spectrum neuromodulation. The results suggest that Te could be a promising candidate for optoelectronic applications and neuromodulation therapies. The study highlights the potential of Te for infrared-based optoelectronic applications and neuromodulation, with the BPVE in Te providing a versatile platform for exploring optoelectronic applications. The findings demonstrate that Te can be used for broad-spectrum neuromodulation, with the BPVE in Te enabling efficient light-to-electricity conversion and neuromodulation. The study also shows that Te can be used for neuromodulation, with the BPVE in Te enabling efficient light-to-electricity conversion and neuromodulation. The results suggest that Te could be a promising candidate for optoelectronic applications and neuromodulation therapies.This study reports a giant infrared bulk photovoltaic effect (BPVE) in tellurine (Te) for broad-spectrum neuromodulation. Te, a narrow bandgap semiconductor, exhibits a wide range of photovoltaic wavelengths from ultraviolet to mid-infrared, with a photocurrent density of 70.4 A cm⁻² under infrared light, surpassing previous semiconductors and semimetals. The BPVE in Te is attributed to its noncentrosymmetric structure, which enables efficient light-to-electricity conversion. Te nanoflakes, when attached to cortical neurons, elicit action potentials under broad-spectrum light irradiation, demonstrating the potential of Te for neuromodulation. The study also reveals that the BPVE in Te spans a wide wavelength range, from ultraviolet (390 nm) to mid-infrared (3.8 μm), and that the infrared BPVE in Te is highly efficient, enabling broad-spectrum neuromodulation. The results suggest that Te could be a promising candidate for optoelectronic applications and neuromodulation therapies. The study highlights the potential of Te for infrared-based optoelectronic applications and neuromodulation, with the BPVE in Te providing a versatile platform for exploring optoelectronic applications. The findings demonstrate that Te can be used for broad-spectrum neuromodulation, with the BPVE in Te enabling efficient light-to-electricity conversion and neuromodulation. The study also shows that Te can be used for neuromodulation, with the BPVE in Te enabling efficient light-to-electricity conversion and neuromodulation. The results suggest that Te could be a promising candidate for optoelectronic applications and neuromodulation therapies.
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[slides and audio] Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation