The paper presents the development of room-temperature Terahertz (THz) detectors based on graphene field-effect transistors (FETs). The authors demonstrate that these devices can efficiently detect THz radiation at room temperature, achieving noise equivalent power (NEP) levels below 30 nW/Hz^1/2. The detectors exploit the non-linear FET response to oscillating radiation fields, combining thermoelectric and photoconductive contributions. The graphene FETs are fabricated with a top-gate design and coupled to a log-periodic circular-toothed antenna to enhance responsivity. The devices show broadband THz detection capabilities, with responsivity values measured as a function of gate voltage and polarization angle. The NEP values are lower than those reported for previous RT FET detectors but are still promising for large-area, fast imaging applications. The paper also discusses the potential for further performance improvements and the use of these detectors in fundamental physics investigations.The paper presents the development of room-temperature Terahertz (THz) detectors based on graphene field-effect transistors (FETs). The authors demonstrate that these devices can efficiently detect THz radiation at room temperature, achieving noise equivalent power (NEP) levels below 30 nW/Hz^1/2. The detectors exploit the non-linear FET response to oscillating radiation fields, combining thermoelectric and photoconductive contributions. The graphene FETs are fabricated with a top-gate design and coupled to a log-periodic circular-toothed antenna to enhance responsivity. The devices show broadband THz detection capabilities, with responsivity values measured as a function of gate voltage and polarization angle. The NEP values are lower than those reported for previous RT FET detectors but are still promising for large-area, fast imaging applications. The paper also discusses the potential for further performance improvements and the use of these detectors in fundamental physics investigations.