This paper presents the fabrication and electrical characterization of graphene nano-ribbon (GNR) field-effect transistor devices. The study investigates how the electrical properties of GNRs vary with ribbon width. The results show that the resistivity of GNRs increases as the ribbon width decreases, indicating the influence of edge states. Temperature-dependent measurements suggest that a finite quantum confinement gap opens in narrow ribbons. The electrical current noise of GNR devices at low frequencies is dominated by 1/f noise. Graphene, a single layer of carbon, has unique electronic properties, including a linear relationship between electronic energy and momentum. However, it is a zero-gap semiconductor, making it unsuitable for direct use in field-effect transistors (FETs). Narrow ribbons can confine electrons, leading to a finite energy gap and semiconducting behavior. The study shows that very narrow GNRs can achieve a gap similar to that of large-diameter carbon nanotubes (CNTs). The GNRs were fabricated using electron beam lithography and etching techniques. The devices were measured at different temperatures, revealing that narrow GNRs exhibit significant changes in electrical characteristics with temperature. The 20 nm GNR was found to have a finite semiconducting gap of about 30 meV. The off-state current was analyzed, and an Arrhenius plot showed that the current follows an exponential dependence on temperature, indicating the presence of a finite gap. The study also found that the dominant electrical noise at low frequencies is 1/f noise, which is attributed to fluctuations in the occupancy of charged traps in the substrate. The noise amplitude was found to follow a 1/N relationship, suggesting that edge states do not significantly affect the 1/f noise. The results indicate that GNRs can be used in device applications similar to CNTs, with the potential for technological applications due to their unique electronic properties.This paper presents the fabrication and electrical characterization of graphene nano-ribbon (GNR) field-effect transistor devices. The study investigates how the electrical properties of GNRs vary with ribbon width. The results show that the resistivity of GNRs increases as the ribbon width decreases, indicating the influence of edge states. Temperature-dependent measurements suggest that a finite quantum confinement gap opens in narrow ribbons. The electrical current noise of GNR devices at low frequencies is dominated by 1/f noise. Graphene, a single layer of carbon, has unique electronic properties, including a linear relationship between electronic energy and momentum. However, it is a zero-gap semiconductor, making it unsuitable for direct use in field-effect transistors (FETs). Narrow ribbons can confine electrons, leading to a finite energy gap and semiconducting behavior. The study shows that very narrow GNRs can achieve a gap similar to that of large-diameter carbon nanotubes (CNTs). The GNRs were fabricated using electron beam lithography and etching techniques. The devices were measured at different temperatures, revealing that narrow GNRs exhibit significant changes in electrical characteristics with temperature. The 20 nm GNR was found to have a finite semiconducting gap of about 30 meV. The off-state current was analyzed, and an Arrhenius plot showed that the current follows an exponential dependence on temperature, indicating the presence of a finite gap. The study also found that the dominant electrical noise at low frequencies is 1/f noise, which is attributed to fluctuations in the occupancy of charged traps in the substrate. The noise amplitude was found to follow a 1/N relationship, suggesting that edge states do not significantly affect the 1/f noise. The results indicate that GNRs can be used in device applications similar to CNTs, with the potential for technological applications due to their unique electronic properties.