The authors have fabricated graphene nano-ribbon (GNR) field-effect transistor (FET) devices and investigated their electrical properties as a function of ribbon width. They found that the resistivity of GNRs increases as their width decreases, indicating the impact of edge states. Temperature-dependent measurements suggest a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the GNR devices at low frequencies is dominated by $1/f$ noise, which is attributed to fluctuations in the occupancy of charged traps in the substrate. The study also explores the effects of potassium doping and annealing on the electrical characteristics of GNR devices, showing a clear shift in the Fermi level and the appearance of an electron branch. The results highlight the potential of GNRs for technological applications, particularly in the context of their unique electronic properties and noise behavior.The authors have fabricated graphene nano-ribbon (GNR) field-effect transistor (FET) devices and investigated their electrical properties as a function of ribbon width. They found that the resistivity of GNRs increases as their width decreases, indicating the impact of edge states. Temperature-dependent measurements suggest a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the GNR devices at low frequencies is dominated by $1/f$ noise, which is attributed to fluctuations in the occupancy of charged traps in the substrate. The study also explores the effects of potassium doping and annealing on the electrical characteristics of GNR devices, showing a clear shift in the Fermi level and the appearance of an electron branch. The results highlight the potential of GNRs for technological applications, particularly in the context of their unique electronic properties and noise behavior.