Graphene nanoribbons (GNRs) are narrow strips of graphene with widths ranging from a few nanometers to a few tens of nanometers. They possess excellent properties of graphene, such as high carrier mobility, and exhibit unique physical characteristics like adjustable band gaps and spin-polarized edge states. These properties make GNRs promising candidates for carbon-based electronics. This review introduces the edge geometry and electronic bands of GNRs, discusses various fabrication methods, and analyzes the performance of GNR field-effect transistor devices. It also explores the use of GNRs as quantum dots and spintronic devices. The challenges and opportunities in the development of GNRs as quantum materials for next-generation electronics and spintronics are discussed. Key methods for fabricating GNRs include top-down and bottom-up approaches, such as lithographic patterning, chemical routes, unzipping carbon nanotubes, and on-surface polymerization. The review highlights the importance of substrate choice, such as h-BN, for high-quality GNR synthesis and device performance. Despite challenges in precise control and contamination issues, the potential of GNRs in nanoelectronics and spintronics is significant, with ongoing research aiming to overcome these obstacles.Graphene nanoribbons (GNRs) are narrow strips of graphene with widths ranging from a few nanometers to a few tens of nanometers. They possess excellent properties of graphene, such as high carrier mobility, and exhibit unique physical characteristics like adjustable band gaps and spin-polarized edge states. These properties make GNRs promising candidates for carbon-based electronics. This review introduces the edge geometry and electronic bands of GNRs, discusses various fabrication methods, and analyzes the performance of GNR field-effect transistor devices. It also explores the use of GNRs as quantum dots and spintronic devices. The challenges and opportunities in the development of GNRs as quantum materials for next-generation electronics and spintronics are discussed. Key methods for fabricating GNRs include top-down and bottom-up approaches, such as lithographic patterning, chemical routes, unzipping carbon nanotubes, and on-surface polymerization. The review highlights the importance of substrate choice, such as h-BN, for high-quality GNR synthesis and device performance. Despite challenges in precise control and contamination issues, the potential of GNRs in nanoelectronics and spintronics is significant, with ongoing research aiming to overcome these obstacles.