High-fidelity single-spin shuttling in silicon

High-fidelity single-spin shuttling in silicon

June 12, 2024 | M. De Smet†‡, Y. Matsumoto†‡, A.M.J. Zwerver†, L. Tryputen‡, S.L. de Snoo†, S.V. Amitonov‡, A. Sammak‡, N. Samkharadze‡, Ö. Güll‡, R. N. M. Wasserman‡, M. Rimbach-Russ†, G. Scappucci†, and L.M.K. Vandersypen†*
This paper reports on high-fidelity single-spin shuttling in a silicon/SiGe heterostructure using electric gate potentials. The authors investigate two methods of spin coherent shuttling: bucket-brigade (BB) and conveyor-mode (CV). BB shuttling involves moving an electron between multiple quantum dots by adjusting their electrochemical potentials, while CV shuttling uses a traveling wave potential to transport the electron within a moving quantum dot. The study finds that CV shuttling exhibits better spin coherence than BB shuttling, allowing for faster and more coherent electron displacement over extended distances. Specifically, the authors demonstrate that an electron can be displaced over an effective distance of 10 μm in under 200 ns with an average fidelity of 99%. These results are significant for the development of large-scale semiconductor quantum processors, as they show that electron shuttling can be used to increase connectivity between qubit arrays. The study also includes detailed characterizations of the device, including measurements of spin dephasing times and the analysis of noise sources during shuttling.This paper reports on high-fidelity single-spin shuttling in a silicon/SiGe heterostructure using electric gate potentials. The authors investigate two methods of spin coherent shuttling: bucket-brigade (BB) and conveyor-mode (CV). BB shuttling involves moving an electron between multiple quantum dots by adjusting their electrochemical potentials, while CV shuttling uses a traveling wave potential to transport the electron within a moving quantum dot. The study finds that CV shuttling exhibits better spin coherence than BB shuttling, allowing for faster and more coherent electron displacement over extended distances. Specifically, the authors demonstrate that an electron can be displaced over an effective distance of 10 μm in under 200 ns with an average fidelity of 99%. These results are significant for the development of large-scale semiconductor quantum processors, as they show that electron shuttling can be used to increase connectivity between qubit arrays. The study also includes detailed characterizations of the device, including measurements of spin dephasing times and the analysis of noise sources during shuttling.
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