This study presents the first comprehensive investigation of process-friendly multilayer molybdenum disulphide (MoS₂) field-effect transistors (FETs) for applications in thin-film transistors (TFTs). The research demonstrates that multilayer MoS₂ FETs exhibit high mobilities (>100 cm² V⁻¹ s⁻¹), near-ideal subthreshold swings (~70 mV per decade), and robust current saturation over a large voltage window. These results suggest that multilayer MoS₂ FETs can achieve near-intrinsic limits at room temperature, making them promising candidates for high-resolution displays and other applications requiring low-power switching. The study highlights the advantages of multilayer MoS₂ over single-layer MoS₂ in terms of higher carrier densities and current drive, due to the increased density of states in multilayer structures. The research also shows that multilayer MoS₂ FETs can achieve high field-effect mobility and low subthreshold slope, which are essential for high-performance TFTs. The results are supported by simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms. The study demonstrates that multilayer MoS₂ FETs can be fabricated using a single back-gated insulator of 50-nm-thick Al₂O₃, achieving high room-temperature mobilities and very low subthreshold swings. The results indicate that multilayer MoS₂ FETs can be used in applications such as OLED displays, where TFTs operate in the saturation region of drain current. The study also shows that the current saturation in multilayer MoS₂ FETs is robust and not limited by poor electrostatic control or the lack of a bandgap in graphene. The research provides a compelling case for the application of multilayer MoS₂ FETs in TFTs, with potential implications for the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties in layered semiconductors. The study also highlights the importance of dielectric engineering in improving the performance of MoS₂ FETs and suggests future directions for improving mobility in layered semiconductors.This study presents the first comprehensive investigation of process-friendly multilayer molybdenum disulphide (MoS₂) field-effect transistors (FETs) for applications in thin-film transistors (TFTs). The research demonstrates that multilayer MoS₂ FETs exhibit high mobilities (>100 cm² V⁻¹ s⁻¹), near-ideal subthreshold swings (~70 mV per decade), and robust current saturation over a large voltage window. These results suggest that multilayer MoS₂ FETs can achieve near-intrinsic limits at room temperature, making them promising candidates for high-resolution displays and other applications requiring low-power switching. The study highlights the advantages of multilayer MoS₂ over single-layer MoS₂ in terms of higher carrier densities and current drive, due to the increased density of states in multilayer structures. The research also shows that multilayer MoS₂ FETs can achieve high field-effect mobility and low subthreshold slope, which are essential for high-performance TFTs. The results are supported by simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms. The study demonstrates that multilayer MoS₂ FETs can be fabricated using a single back-gated insulator of 50-nm-thick Al₂O₃, achieving high room-temperature mobilities and very low subthreshold swings. The results indicate that multilayer MoS₂ FETs can be used in applications such as OLED displays, where TFTs operate in the saturation region of drain current. The study also shows that the current saturation in multilayer MoS₂ FETs is robust and not limited by poor electrostatic control or the lack of a bandgap in graphene. The research provides a compelling case for the application of multilayer MoS₂ FETs in TFTs, with potential implications for the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties in layered semiconductors. The study also highlights the importance of dielectric engineering in improving the performance of MoS₂ FETs and suggests future directions for improving mobility in layered semiconductors.