This article presents a comprehensive investigation of multilayer molybdenum disulfide (MoS₂) field-effect transistors (FETs), demonstrating their potential for thin-film transistor (TFT) applications. Unlike graphene, MoS₂ has a bandgap (1–2 eV) and enhanced mobility through dielectric engineering, making it suitable for low-power switching devices. However, the complex fabrication process of single-layer MoS₂ with an additional high-k dielectric layer may limit its commercial viability. The study reports the first demonstration of multilayer MoS₂ FETs with a single back-gated insulator of 50-nm-thick Al₂O₃, achieving high mobilities (>100 cm² V⁻¹ s⁻¹), near-ideal subthreshold swings (~70 mV per decade), and robust current saturation over a large voltage window. These results are supported by simulations based on Shockley’s long-channel transistor model and calculations of scattering mechanisms, suggesting that multilayer MoS₂ FETs can reach near-intrinsic limits at room temperature. The findings highlight the advantages of multilayer MoS₂ over single-layer MoS₂ in terms of higher drive currents, multiple conducting channels, and improved electrical and optical reliability, making it a compelling candidate for high-resolution large-area displays and further scientific investigations into layered semiconductors.This article presents a comprehensive investigation of multilayer molybdenum disulfide (MoS₂) field-effect transistors (FETs), demonstrating their potential for thin-film transistor (TFT) applications. Unlike graphene, MoS₂ has a bandgap (1–2 eV) and enhanced mobility through dielectric engineering, making it suitable for low-power switching devices. However, the complex fabrication process of single-layer MoS₂ with an additional high-k dielectric layer may limit its commercial viability. The study reports the first demonstration of multilayer MoS₂ FETs with a single back-gated insulator of 50-nm-thick Al₂O₃, achieving high mobilities (>100 cm² V⁻¹ s⁻¹), near-ideal subthreshold swings (~70 mV per decade), and robust current saturation over a large voltage window. These results are supported by simulations based on Shockley’s long-channel transistor model and calculations of scattering mechanisms, suggesting that multilayer MoS₂ FETs can reach near-intrinsic limits at room temperature. The findings highlight the advantages of multilayer MoS₂ over single-layer MoS₂ in terms of higher drive currents, multiple conducting channels, and improved electrical and optical reliability, making it a compelling candidate for high-resolution large-area displays and further scientific investigations into layered semiconductors.