This paper reports the development of high-performance p-type field-effect transistors (FETs) based on single-layer WSe₂ with chemically doped contacts and high-κ gate dielectrics. The transistors exhibit a high effective hole mobility of ~250 cm²/Vs, a perfect subthreshold swing of ~60 mV/dec, and an I_ON/I_OFF ratio of >10⁶ at room temperature. The researchers used high work function Pd contacts and patterned NO₂ chemisorption on WSe₂ to lower the contact resistance for hole injection. The results demonstrate a promising material system and device architecture for p-type monolayer FETs with excellent characteristics, making WSe₂ a promising candidate for future scaled electronics.This paper reports the development of high-performance p-type field-effect transistors (FETs) based on single-layer WSe₂ with chemically doped contacts and high-κ gate dielectrics. The transistors exhibit a high effective hole mobility of ~250 cm²/Vs, a perfect subthreshold swing of ~60 mV/dec, and an I_ON/I_OFF ratio of >10⁶ at room temperature. The researchers used high work function Pd contacts and patterned NO₂ chemisorption on WSe₂ to lower the contact resistance for hole injection. The results demonstrate a promising material system and device architecture for p-type monolayer FETs with excellent characteristics, making WSe₂ a promising candidate for future scaled electronics.