This article presents a study on the development of highly efficient AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) through innovative bandgap engineering and device design. The researchers achieved a light output power (LOP) of 140.1 mW at 850 mA, which is significantly higher than conventional DUV LEDs. The key improvements include the use of tailored multiple quantum wells (MQWs) to mitigate the quantum-confined Stark effect (QCSE), a low-optical-loss tunneling junction (TJ), and a dielectric SiO₂ insertion structure (IS-SiO₂) to enhance light extraction efficiency (LEE). These advancements address major challenges in DUV LED performance, such as QCSE, optical absorption in the p-electrode/ohmic contact layer, and poor transverse magnetic (TM)-polarized light extraction. The study also validates the scalability of the DUV LEDs through on-wafer electroluminescence characterization. The results demonstrate a 4.5-fold increase in external quantum efficiency (EQE) compared to conventional DUV LEDs. The integration of these techniques provides a universal strategy for fabricating high-performance DUV LEDs, with potential applications in biomedical testing, water/air purification, and other fields. The study highlights the importance of bandgap engineering and device optimization in achieving efficient DUV LED performance.This article presents a study on the development of highly efficient AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) through innovative bandgap engineering and device design. The researchers achieved a light output power (LOP) of 140.1 mW at 850 mA, which is significantly higher than conventional DUV LEDs. The key improvements include the use of tailored multiple quantum wells (MQWs) to mitigate the quantum-confined Stark effect (QCSE), a low-optical-loss tunneling junction (TJ), and a dielectric SiO₂ insertion structure (IS-SiO₂) to enhance light extraction efficiency (LEE). These advancements address major challenges in DUV LED performance, such as QCSE, optical absorption in the p-electrode/ohmic contact layer, and poor transverse magnetic (TM)-polarized light extraction. The study also validates the scalability of the DUV LEDs through on-wafer electroluminescence characterization. The results demonstrate a 4.5-fold increase in external quantum efficiency (EQE) compared to conventional DUV LEDs. The integration of these techniques provides a universal strategy for fabricating high-performance DUV LEDs, with potential applications in biomedical testing, water/air purification, and other fields. The study highlights the importance of bandgap engineering and device optimization in achieving efficient DUV LED performance.